2001 Nov 01 2
Philips Semiconductors Product specification

860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI

FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating
with a voltage supply of 24 V (DC). Both modules are
electrically identical, only the pinning is different.
PINNING - SOT115J
PIN DESCRIPTION
BGD906 BGD906MI
1 input output
2, 3 common common
5+V
B+VB
7, 8 common common
9 output input
Fig.1 Simplified outline SOT115J.
handbook, halfpage
789
2351
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 21.2 21.8 dB
f = 900 MHz 22 23 dB
Itot total current consumption (DC) VB=24V; T
mb =35°C 405 435 mA
SYMBOL PARAMETER MIN. MAX. UNIT
VBsupply voltage 30 V
ViRF input voltage 70 dBmV
Tstg storage temperature 40 +100 °C
Tmb operating mounting base temperature 20 +100 °C