2001 Nov 01 2
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
FEATURES
•Excellent linearity
•Extremely low noise
•Excellent return loss properties
•Silicon nitride passivation
•Rugged construction
•Gold metallization ensures excellent reliability.
APPLICATIONS
•CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating
with a voltage supply of 24 V (DC). Both modules are
electrically identical, only the pinning is different.
PINNING - SOT115J
PIN DESCRIPTION
BGD906 BGD906MI
1 input output
2, 3 common common
5+V
B+VB
7, 8 common common
9 output input
Fig.1 Simplified outline SOT115J.
handbook, halfpage
789
2351
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 21.2 21.8 dB
f = 900 MHz 22 23 dB
Itot total current consumption (DC) VB=24V; T
mb =35°C 405 435 mA
SYMBOL PARAMETER MIN. MAX. UNIT
VBsupply voltage −30 V
ViRF input voltage −70 dBmV
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −20 +100 °C