2001 Nov 01 4
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
CSO composite second
order distortion 49 chs flat; Vo= 47 dBmV; fm= 860.5 MHz −−63 −59 dB
77 chs flat; Vo= 44 dBmV; fm= 548.5 MHz −−74 −65 dB
110 chs flat; Vo= 44 dBmV; fm= 746.5 MHz −−66 −58 dB
129 chs flat; Vo= 44 dBmV; fm= 860.5 MHz −−59 −54 dB
110 chs; fm= 150 MHz;
Vo= 49 dBmV at 550 MHz; note 1 −−64 −60 dB
129 chs; fm= 150 MHz;
Vo= 49.5 dBmV at 860 MHz; note 2 −−60 −54 dB
d2second order distortion note 3 −−83 −70 dB
note 4 −−81.5 −73 dB
note 5 −−79 −76 dB
Vooutput voltage dim =−60 dB; note 6 63.5 64.5 −dBmV
dim =−60 dB; note 7 64.5 66.5 −dBmV
dim =−60 dB; note 8 66.5 69 −dBmV
CTB compression = 1 dB; 129 chs flat;
f = 859.25 MHz 48.5 49 −dBmV
CSO compression = 1 dB; 129 chs flat;
f = 860.5 MHz 51 54 −dBmV
NF noise figure f = 50 MHz −5 5.5 dB
f = 550 MHz −4.5 5 dB
f = 750 MHz −56dB
f = 900 MHz −6 7.5 dB
Itot total current
consumption (DC) note 9 405 420 435 mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Notes
1. Tilt = 9 dB (50 to 550 MHz)
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 805.25 MHz; Vq= 44 dBmV;
measured at fp+f
q= 860.5 MHz.
4. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 691.25 MHz; Vq= 44 dBmV;
measured at fp+f
q= 746.5 MHz.
5. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 493.25 MHz; Vq= 44 dBmV;
measured at fp+f
q= 548.5 MHz.
6. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=V
o
;
f
q= 858.25 MHz; Vq=V
o−6 dB;
fr= 860.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 849.25 MHz.
7. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=V
o
;
f
q= 747.25 MHz; Vq=V
o−6 dB;
fr= 749.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 738.25 MHz.
8. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=V
o
;
f
q= 547.25 MHz; Vq=V
o−6 dB;
fr= 549.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 538.25 MHz.
9. The module normally operates at VB= 24 V, but is
able to withstand supply transients up to 35 V.