1998 May 13 2
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
FEATURES
•Single 6 V nominal supply voltage
•3 W output power
•Easy control of output power by DC voltage
•Silicon bipolar technology
•Standby current less than 100 µA.
APPLICATIONS
•Portable communication equipment operating in the
400 to 440 MHz and 430 to 488 MHz frequency ranges
respectively.
DESCRIPTION
The BGY148A and BGY148B are three-stage UHF
amplifier modules in a SOT421A package. Each module
consists of three NPN silicon planar transistor dies
mounted together with matching and bias circuit
components on a metallized ceramic substrate. The
modules produce an output power of 3 W into a load of
50 Ω with an RF drive power of 10 mW.
PINNING - SOT421A
PIN DESCRIPTION
1 RF input
2V
C
3V
S
4 RF output
Flange ground
Fig.1 Simplified outline (SOT421A).
handbook, halfpage
MSA483
12 34
Top view
QUICK REFERENCE DATA
RF performance at Tmb =25°C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. In order to control the mounting-base temperature, proper heatsinking of the underside of the device is required.
It is therefore advisable that the device is mounted on a printed-circuit board with metallized through holes.
TYPE MODE OF
OPERATION f
(MHz) VS
(V) PL
(W) Gp
(dB) η
(%) ZS; ZL
(Ω)
BGY148A CW 400 to 440 6 ≥3≥24.8 typ. 53 50
BGY148B CW 430 to 488 6 ≥3≥24.8 typ. 53 50
SYMBOL PARAMETER MIN. MAX. UNIT
VSDC supply voltage −8.5 V
VCDC control voltage −4V
P
Dinput drive power −20 mW
PLload power −3.5 W
Tstg storage temperature −40 +100 °C
Tmb operating mounting-base temperature; note1 −30 +100 °C