2001 Oct 22 4
Philips Semiconductors Product specification
600 MHz, 18.5 dB gain push-pull amplifier BGY685AD
Table 2 Bandwidth 40 to 550 MHz; VB= 24 V; Tcase =30°C; ZS=Z
L=75Ω
Notes
1. Vp=V
q= 44 dBmV;
fp= 55.25 MHz; fq= 493.25 MHz;
measured at fp+f
q= 548.5 MHz.
2. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=V
o
;
f
q= 547.25 MHz; Vq=V
o−6 dB;
fr= 549.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 538.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 18 19 dB
f = 550 MHz 18.8 −dB
SL slope cable equivalent f = 40 to 550 MHz 0.2 2.2 dB
FL flatness of frequency response f = 40 to 550 MHz −±0.3 dB
S11 input return losses f = 40 to 80 MHz 20 −dB
f = 80 to 160 MHz 19 −dB
f = 160 to 550 MHz 18 −dB
S22 output return losses f = 40 to 80 MHz 20 −dB
f = 80 to 160 MHz 19 −dB
f = 160 to 550 MHz 18 −dB
S21 phase response f = 50 MHz −45 +45 deg
CTB composite triple beat 77 channels flat;
Vo= 44 dBmV;
measured at 547.25 MHz
−−65 dB
Xmod cross modulation 77 channels flat;
Vo= 44 dBmV;
measured at 55.25 MHz
−−60 dB
CSO composite second order distortion 77 channels flat;
Vo= 44 dBmV;
measured at 548.5 MHz
−−62 dB
d2second order distortion note 1 −−72 dB
Vooutput voltage dim =−60 dB; note 2 63 −dBmV
F noise figure f = 50 MHz −6dB
f = 550 MHz −7.5 dB
Itot total current consumption (DC) note 3 −250 mA