Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
VBG Battery to ground IG = 1 mA 50 55 65 V
VBL Battery to load IL = IG = 1 mA 50 55 65 V
-VLG Negative load to ground IL = 1 mA 12 17 21 V
Supply voltage battery to ground
VBG Operating range1-5-40V
Currents VBG = 13 V
ILNominal load current2VBL = 0.5 V; Tmb = 85 ˚C 6 - - A
IBQuiescent current3VIG = 0 V; VLG = 0 V - 0.1 2 µA
IGOperating current4VIG = 5 V; IL = 0 A 1.5 2.2 4 mA
ILOff-state load current5VBL = 13 V; VIG = 0 V - 0.1 1 µA
Resistances
RON On-state resistance6VBG = 13 V; IL = 7.5 A; tp = 300 µs - 45 60 m
RON On-state resistance VBG = 5 V; IL = 1.5 A; tp = 300 µs - 70 90 m
RGInternal ground resistance IG = 10 mA - 150 -
INPUT CHARACTERISTICS
Tmb = 25 ˚C; VBG = 13 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IIInput current VIG = 5 V 35 60 100 µA
VIG Input clamping voltage II = 200 µA 6 7.5 8.5 V
VIG(ON) Input turn-on threshold voltage - 2.1 2.7 V
VIG(OFF) Input turn-off threshold voltage 1.5 2 - V
1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
July 1996 3 Rev 1.000