Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.22. Typical status clamping voltage, V
SG
= f(T
j
).
parameter V
IG
; conditions I
S
= 100
µ
A, V
BG
= 13 V
Fig.23. Low load current detection threshold.
I
L(OC)
= f(T
j
); conditions V
IG
= 5 V; V
BG
= 13 V
Fig.24. Supply typical undervoltage thresholds.
V
BG(TO)
= f(T
j
); conditions V
IG
= 3 V; I
L
= 80 mA
Fig.25. Supply typical overvoltage thresholds.
V
BG(LP)
= f(T
j
); conditions V
IG
= 5 V; I
L
= 80 mA
Fig.26. Typical battery to ground clamping voltage.
V
BG
= f(T
j
); parameter I
G
Fig.27. Typical negative load clamping characteristic.
I
L
= f(V
LG
); conditions V
IG
= 0 V, t
p
= 300
µ
s, 25 ˚C
-60 -20 20 60 100 140 180
Tj / C
VSG / V BUK205-50Y
8.0
7.5
7.0
6.5
5
VIG / V =
0
-60 -20 20 60 100 140 180
Tj / C
VBG(LP) / V BUK205-50Y
47
46
45
44
43
on
off
-50 0 50 100 150 200
0
100
200
300
400
500
600
700
800 BUK205-50Y
Tmb / C
IL(OC) / mA
max.
min.
typ.
-60 -20 20 60 100 140 180
Tj / C
VBG / V BUK205-50Y
65
60
55
50
10 uA
1 mA
IG =
-60 -20 20 60 100 140 180
Tj / C
VBG(TO) / V BUK205-50Y
5
4
3
2
1
0
on
off
-25 -20 -15 -10 -5 0
0
5
10
15
20
25
30 BUK205-50Y
VLG / V
IL / A
July 1996 9 Rev 1.000