Philips Semiconductors Product specification
TOPFET dual high side switch PIP3202-DC
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Undervoltage
VBG(UV) Low supply threshold voltage12 4.2 5.3 V
∆VBG(UV) Hysteresis 0.1 0.5 1 V
Overvoltage
VBG(OV) High supply threshold voltage235 40 45 V
∆VBG(OV) Hysteresis 0.4 1 2 V
IBG(OV) Operating current per channel VBG > VBG(OV) -12mA
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to TRUTH TABLE.
5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Overload protection VBL = VBG; tp = 300 µs
IL(lim) Load current limiting VBG ≥ 8 V 18 30 42 A
VBG = 5.5 V 15 27 42 A
Short circuit load protection Tmb ≤ 125˚C prior to overload3
PD(TO) Overload power threshold for latched protection4100 150 200 W
TDSC Characteristic time which determines trip time5- 200 500 µs
Overtemperature protection
Tj(TO) Threshold junction temperature 150 170 190 ˚C
∆Tj(TO) Hysteresis63 1020˚C
1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 SC protection for PD > PD(TO) is latched. Normal operation may only be resumed after the input is toggled low then high again.
Normal operation is maintained as long as PD < PD(TO) and Tj < Tj(TO).
5 Trip time td sc varies with overload dissipation PD according to the exponential model formula td sc ≈ TDSC / LN[ PD / PD(TO) ].
6 After cooling below the reset temperature the channel will resume normal operation.
September 2001 5 Rev 1.000