1998 Feb 16 28
Philips Semiconductors Product specification
CMOS digital decoding IC with RAM for
Compact Disc SAA7345
3-state outputs MISC, SCLK, WCLK, DATA and CL11
VOL LOW level output voltage IOL = 1 mA 0 −0.4 V
VOH HIGH level output voltage IOH =−1mA V
DD −0.4 −VDD V
CLload capacitance −−50 pF
troutput rise time CL= 20 pF; note 1 −−15 ns
tfoutput fall time CL= 20 pF; note 1 −−15 ns
ILI 3-state leakage current VI= 0 to VDD −10 −+10 µA
3-state outputs MOTO1, MOTO2 and DOBM
VOL LOW level output voltage VDD = 4.5 to 5.5 V;
IOL =10mA 0−1.0 V
VDD = 3.4 to 5.5 V;
IOL =5mA 0−1.0 V
VOH HIGH level output voltage VDD = 4.5 to 5.5 V;
IOH =−10 mA VDD−1−VDD V
VDD = 3.4 to 5.5 V;
IOH =−5mA V
DD −1−VDD V
CLload capacitance −−50 pF
troutput rise time CL= 20 pF; note 1 −−10 ns
tfoutput fall time CL= 20 pF; note 1 −−10 ns
ILI 3-state leakage current VI= 0 to VDD −10 −+10 µA
Digital input/output DA
VIL LOW level input voltage −0.3 −0.3VDD V
VIH HIGH level input voltage 0.7VDD −VDD + 0.3 V
ILI 3-state leakage current VI= 0 to VDD −10 −+10 µA
CIinput capacitance −−10 pF
VOL LOW level output voltage IOL = 1 mA 0 −0.4 V
VOH HIGH level output voltage IOH =−1mA V
DD −0.4 −VDD V
CLload capacitance −−50 pF
troutput rise time CL= 20 pF; note 1 −−15 ns
tfoutput fall time CL= 20 pF; note 1 −−15 ns
Crystal oscillator input CRIN (external clock)
gmmutual conductance at start-up −4−mS
ROoutput resistance at start-up −11 −kΩ
CIinput capacitance −−10 pF
ILI input leakage current −10 −+10 µA
Crystal oscillator output CROUT (see Fig.26)
fxtal crystal frequency 8 16.9344 35 MHz
Cfb feedback capacitance −−5pF
C
Ooutput capacitance −−10 pF
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT