2000 Feb 09 9
Philips Semiconductors Product specification
2× 25 W high efficiency car radio power
amplifier TDA1563Q
AC CHARACTERISTICS
VP= 14.4 V; RL=4Ω; CSE = 1000 µF; f = 1 kHz; Tamb =25°C; measured in Fig.7; unless otherwise specified.
Notes
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.
2. Frequency response externally fixed (input capacitors determine low frequency roll-off).
3. The SE to BTL switch voltage level depends on VP.
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage is independent of Rs.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pooutput power THD = 0.5% 15 19 −W
THD = 10% 23 25 −W
EIAJ −38 −W
VP= 13.2 V; THD= 0.5% −16 −W
VP= 13.2 V; THD= 10% −20 −W
THD total harmonic distortion Po= 1 W; note 1 −0.1 −%
Pddissipated power see Figs 10 and 11 W
Bppower bandwidth THD = 1%; Po=−1dB
with respect to 15 W
−20 to 15000 −Hz
fro(l) low frequency roll-off −1 dB; note 2 −25 −Hz
fro(h) high frequency roll-off −1 dB 130 −−kHz
Gvclosed loop voltage gain Po= 1 W 25 26 27 dB
SVRR supply voltage ripple rejection Rs=0Ω; Vripple = 2 V (p-p)
on/mute 45 65 −dB
standby; f = 100 Hz to 10 kHz 80 −−dB
CMRR common mode rejection ratio Rs=0Ω−80 −dB
Ziinput impedance 90 120 150 kΩ
∆Zimismatch in input impedance −1−%
VSE-BTL SE to BTL switch voltage level note3 −3−V
Vo(mute)output voltage mute (RMSvalue) Vi= 1 V (RMS) −100 150 µV
Vn(o) noise output voltage on; Rs=0Ω; note4 −100 150 µV
on; Rs=10kΩ; note4 −105 −µV
mute; note 5 −100 150 µV
αcs channel separation Rs=0Ω; Po=15W 40 70 −dB
∆Gvchannel unbalance −− 1dB