Philips Semiconductors Product specification
µA741/µA741C/SA741CGeneral purpose operational amplifier
1994 Aug 31 3
DC ELECTRICAL CHARACTERISTICS
TA = 25°C, VS = ±15V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SA741C
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max
UNIT
VOS RS=10k2.0 6.0 mV
Offset voltage RS=10k, over temp. 7.5 mV
VOS/T 10 µV/°C
IOS 20 200 nA
Offset current Over temp. 500 nA
IOS/T 200 pA/°C
IBIAS 80 500 nA
Input bias current Over temp. 1500 nA
IB/T 1 nA/°C
RL=10k±12 ±14 V
VOUT Output voltage swing
RL=2k, over temp. ±10 ±13 V
RL=2k, VO=±10V 20 200 V/mV
AVOL Large-signal voltage gain
RL=2k, VO=±10V, over temp. 15 V/mV
Offset voltage adjustment range ±30 mV
PSRR Supply voltage rejection ratio RS10k10 150 µV/V
CMRR Common mode rejection ration 70 90 dB
VIN Input voltage range Over temp. ±12 ±13 V
RIN Input resistance 0.3 2.0 M
PdPower consumption 50 85 mW
ROUT Output resistance 75
ISC Output short-circuit current 25 mA
AC ELECTRICAL CHARACTERISTICS
TA=25°C, VS = ±15V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
µA741, µA741C
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max
UNIT
RIN Parallel input resistance Open-loop, f=20Hz 0.3 M
CIN Parallel input capacitance Open-loop, f=20Hz 1.4 pF
Unity gain crossover frequency Open-loop 1.0 MHz
Transient response unity gain VIN=20mV, RL=2k, CL100pF
tRRise time 0.3 µs
Overshoot 5.0 %
SR Slew rate C100pF, RL2k, VIN=±10V 0.5 V/µs