Philips Semiconductors Product specification
µA741/µA741C/SA741CGeneral purpose operational amplifier
1994 Aug 31 2
DC ELECTRICAL CHARACTERISTICS
TA = 25°C, VS = ±15V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
µA741 µA741C
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max Min Typ Max
UNIT
VOS Offset voltage RS=10k1.0 5.0 2.0 6.0 mV
RS=10k, over temp. 1.0 6.0 7.5 mV
VOS/T 10 10 µV/°C
IOS Offset current 20 200 20 200 nA
Over temp. 300 nA
TA=+125°C 7.0 200 nA
TA=-55°C 20 500 nA
IOS/T 200 200 pA/°C
IBIAS Input bias current 80 500 80 500 nA
Over temp. 800 nA
TA=+125°C 30 500 nA
TA=-55°C 300 1500 nA
IB/T 1 1 nA/°C
RL=10k±12 ±14 ±12 ±14 V
VOUT Output voltage swing
RL=2k, over temp. ±10 ±13 ±10 ±13 V
RL=2k, VO=±10V 50 200 20 200 V/mV
AVOL Large-signal voltage gain RL=2k, VO=±10V,
over temp. 25 15 V/mV
Offset voltage adjustment range ±30 ±30 mV
RS10k10 150 µV/V
PSRR Supply voltage rejection ratio
RS10k, over temp. 10 150 µV/V
70 90 dB
CMRR Common-mode rejection ratio
Over temp. 70 90 dB
1.4 2.8 1.4 2.8 mA
ICC Supply current TA=+125°C 1.5 2.5 mA
TA=-55°C 2.0 3.3 mA
VIN Input voltage range (µA741, over temp.) ±12 ±13 ±12 ±13 V
RIN Input resistance 0.3 2.0 0.3 2.0 M
50 85 50 85 mW
PDPower consumption TA=+125°C 45 75 mW
TA=-55°C 45 100 mW
ROUT Output resistance 75 75
ISC Output short-circuit current 10 25 60 10 25 60 mA