Rev. 1.00, 05/04, page 527 of 544
22.5 Flash Memory Characteristics
Table 22.12 shows the flash memory characteristics.
Table 22.12 Flash Memory Characteristics
Conditions: VCC = 3.0 V to 3.6 V, VSS = 0 V, Ta = –20 to +75°C
Item Symbol Min. Typ. Max. Unit
Test
Condition
Programming time*1, *2,*4 t
P — 10 200 ms/
128
bytes
Erase time*1, *3,*6 t
E — 100 1200 ms/
block
Reprogramming count NWEC — — 100 times
Wait time after
SWE-bit setting*1
x 1 — — µs
Wait time after
PSU-bit setting*1
y 50 — — µs
z1 28 30 32 µs 1 ≤ n ≤ 6
z2 198 200 202 µs 7 ≤ n ≤ 1000
Wait time after
P-bit setting*1, *4
z3 8 10 12 µs Additional
write
Wait time after
P-bit clear*1
α 5 — — µs
Wait time after
PSU-bit clear*1
β 5 — — µs
Wait time after
PV-bit setting*1
γ 4 — — µs
Wait time after
dummy write*1
ε 2 — — µs
Wait time after
PV-bit clear*1
η 2 — — µs
Wait time after
SWE-bit clear*1
θ 100 — — µs
Programming
Maximum
programming
count*1, *4,*5
N — — 1000 times