DDR SDRAM COMPONENTS

Density

Organization

Part Number

# Pins - Package

Speed (Mbps)

 

 

 

 

 

 

128Mx4

K4H510438J-LCB3/B0

66-TSOP

266/333

 

 

 

 

 

K4H510438J-BCCC/B3

60-FBGA

333/400

 

 

 

 

 

 

 

512Mb

64Mx8

K4H510838J-LCCC/B3

66-TSOP

333/400

 

K4H510838J-BCCC/B3

60-FBGA

333/400

 

 

 

 

 

 

 

 

32Mx16

K4H511638J-LCCC/B3

66-TSOP

333/400

Notes:

B0 = DDR266 (133MHz @ CL=2.5)

A2 = DDR266 (133MHz @ Cl=2)

B3 = DDR333 (166MHz @ CL=2.5)

CC = DDR400 (200MHz @ CL=3)

MOBILE DRAM COMPONENTS

Density

Type

Organization

Part Number

Package

Power

Production

 

 

 

 

 

 

 

512Mb

 

32Mx16

K4X51163PK-FGD8

60-FBGA, 200MHz

1.8V

Now

 

 

 

 

 

 

MDDR

16Mx32

K4X51323PK-8GD8

90-FBGA, 200MHz

1.8V

Now

 

 

 

 

 

 

 

2Gb

64Mx32

K4X2G323PD-8GD8

90-FBGA, 200MHz

1.8V

Now

 

 

 

 

 

 

 

 

4Gb

 

x32 (2CS, 2CKE)

K4X4G303PD-AGD8

168-FBGA, 12x12 PoP, DDP, 200MHz

1.8V

Now

 

 

 

 

 

 

 

2Gb

 

1CH x32

K4P2G324ED-AGC1

168-FBGA, 12x12 PoP, MONO, 800Mbps

1.8V/1.2V/1.2V

Now

 

 

 

 

 

 

 

4Gb

 

1CH x32

K4P4G324EQ-AGC2

168-FBGA, 12x12 PoP, MONO, 1066Mbps

1.8V/1.2V/1.2V

Now

 

 

 

 

 

 

 

1CH x32

K4P4G324EQ-FGC2

134-FBGA, 11x11.5 , MONO, 1066Mbps

1.8V/1.2V/1.2V

Now

 

 

 

 

 

 

 

 

 

 

 

1CH x32

K4P8G304EQ-AGC2

168-FBGA, 12x12 PoP, DDP, 1066Mbps

1.8V/1.2V/1.2V

Now

 

 

 

 

 

 

 

8Gb

LPDDR2

1CH x32

K4P8G304EQ-PGC2

216-FBGA, 12x12 PoP, DDP, 1066Mbps

1.8V/1.2V/1.2V

Now

 

 

 

 

 

 

 

2CH x32

K3PE7E70QM-BGC2

216-FBGA, 12x12 PoP, DDP, 1066Mbps

1.8V/1.2V/1.2V

Now

 

 

 

 

 

 

 

 

 

 

 

2CH x32

K3PE7E70QM-CGC2

220-FBGA, 14x14 PoP, DDP, 1066Mbps

1.8V/1.2V/1.2V

Now

 

 

 

 

 

 

 

16Gb

 

2CH x32

K3PE0E00QM-BGC2

216-FBGA, 12x12 PoP, QDP, 1066Mbps

1.8V/1.2V/1.2V

Now

 

 

 

 

 

 

 

2CH x32

K3PE0E00QM-CGC2

220-FBGA, 14x14 PoP, QDP, 1066Mbps

1.8V/1.2V/1.2V

Now

 

 

 

 

 

 

 

 

 

4Gb

 

1CH x32

K4E4E324ED-EGCE

178-FBGA, 11x11.5, MONO , 1600Mbps

1.8V/1.2V/1.2V

CS

 

 

 

 

 

 

 

 

 

1CH x32

K4E8E304ED-EGCE

178-FBGA, 11x11.5, DDP, 1600Mbps

1.8V/1.2V/1.2V

CS

 

 

 

 

 

 

 

8Gb

 

2CH x32

K3QF1F10DM-AGCE

253-FBGA, 11x11.5, DDP, 1600Mbps

1.8V/1.2V/1.2V

CS

 

 

 

 

 

 

 

 

LPDDR3

2CH x32

K3QF1F10DA-QGCE

216-FBGA, 15x15 PoP, DDP, 1600Mbps

1.8V/1.2V/1.2V

Now

 

 

 

 

 

 

 

1CH x32

K4E6E304ED-EGCE

178-FBGA, 11x11.5, QDP, 1600Mbps

1.8V/1.2V/1.2V

CS

 

 

 

 

 

 

 

 

 

16Gb

 

2CH x32

K3QF2F20DM-AGCE

253-FBGA, 11x11.5, QDP, 1600Mbps

1.8V/1.2V/1.2V

CS

 

 

 

 

 

 

 

2CH x32

K3QF2F20DM-FGCE

256-FBGA, 14x14 PoP, QDP, 1600Mbps

1.8V/1.2V/1.2V

CS

 

 

 

 

 

 

 

 

 

 

 

2CH x32

K3QF2F20DA-QGCE

216-FBGA, 15x15 PoP, QDP, 1600Mbps

1.8V/1.2V/1.2V

Now

GRAPHICS DRAM COMPONENTS

Type

Density

Organization

Part Number

Package

VDD/VDDQ

Speed Bin (MHz)

Production

 

 

 

 

 

 

 

 

 

4Gb

128Mx32

K4G41325FC-HC(04/03/28)

170-FCFBGA

1.5V/1.5V

5000/6000/7000

Now

 

 

K4G41325FC-HC(04/03)

170-FCFBGA

1.35V/1.35V

4000/5000

Now

 

 

 

 

2Gb

64Mx32

K4G20325FD-FC(04/03/28)

170-FBGA

1.5V/1.5V

5000/6000/7000

Now

GDDR5

 

K4G20325FD-FC(04/03)

170-FBGA

1.35V/1.35V

4000/5000

Now

 

 

 

 

 

 

 

 

 

 

 

 

32Mx32

K4G10325FG-HC(03)

170-FCFBGA

1.6V/1.6V

6000

Now

 

 

 

 

 

 

 

 

 

1Gb

 

K4G10325FG-HC(05/04)

170-FCFBGA

1.5V/1.5V

4000/5000

Now

 

 

 

 

 

 

 

 

 

 

 

K4G10325FG-HC(04/03)

170-FCFBGA

1.35V/1.35V

4000/5000

Now

 

 

 

 

 

 

 

 

GDDR3

1Gb

32Mx32

K4J10324KG-HC(14/1A)

136-FBGA

1.8V/1.8V

1400/2000

Now

 

 

 

K4W4G1646D-BC(12/11/1A)

96-FCFBGA

1.5V/1.5V

1600/1866/2133

Now

 

4Gb

256Mx16

K4W4G1646D-BC(1A)

96-FCFBGA

1.35V/1.35V

1866

 

 

K4W4G1646D-BY(12)

96-FCFBGA

1.35V/1.35V

1600

 

 

 

 

 

 

 

 

K4W4G1646B-HC(12/11/1A)

96-FBGA

1.5V/1.5V

1600/1866/2133

Now

 

 

 

 

 

 

 

 

gDDR3

 

 

K4W2G1646Q-BC(12/11/1A)

96-FCFBGA

1.5V/1.5V

1600/1866/2133

Now

 

 

 

 

 

 

 

 

 

2Gb

128Mx16

K4W2G1646Q-BC(1A)

96-FCFBGA

1.35V/1.35V

1866

 

 

 

 

 

 

 

 

K4W2G1646Q-BY(12)

96-FCFBGA

1.35V/1.35V

1600

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K4W2G1646E-BC(15/12/11/1A)

96-FBGA

1.5V/1.5V

1333/1600/1866/2133

Now

 

1Gb

64Mx16

K4W1G1646G-BC(15/12/11/1A)

96-FBGA

1.5V/1.5V

1333/1600/1866/2133

Now

Notes:

Package

(1) Speeds (clock cycle - speed bin)

 

H: FBGA (Halogen Free & Lead Free) (DDR3)

28: 0.28ns (7000Mbps)

1A: 1.0ns (2000Mbps GDDR3)

 

B: FCFBGA (Halogen Free & Lead Free) (DDR3)

03: 0.3ns (6000Mbps)

14: 1.4ns (1400Mbps GDDR3)

 

H: FCFBGA (Halogen Free & Lead Free) (GDDR5)

04: 0.4ns (5000Mbps)

1A: 1.0ns (2133Mbps gDDR3)

 

F: FBGA (Halogen Free & Lead Free) (GDDR5)

05: 0.5ns (4000Mbps)

11: 1.1ns (1866Mbps)

 

 

 

12: 1.25ns (1600Mbps)

DRAM

samsung.com/dram

2H 2013

Mobile & Graphics DRAM Components

9

 

 

Page 9
Image 9
Samsung MZMTD256HAGM00000 manual DDR Sdram Components, Mobile Dram Components, Graphics Dram Components

MZMTD256HAGM00000 specifications

The Samsung MZMTD256HAGM00000 is a high-performance solid-state drive (SSD) designed to meet the demands of modern computing. As a member of Samsung's renowned line of M.2 NVMe SSDs, it offers a combination of speed, reliability, and efficiency, making it an excellent choice for both consumer and enterprise applications.

One of the key features of the MZMTD256HAGM00000 is its use of the NVMe (Non-Volatile Memory Express) interface, which drastically improves data transfer rates compared to traditional SATA interfaces. With NVMe, the drive can communicate directly with the motherboard via the PCIe (Peripheral Component Interconnect Express) bus, allowing it to leverage multiple lanes for data transfer. This results in significantly lower latency and higher throughput, which is crucial for tasks that require quick access to large files, such as video editing, gaming, and data analysis.

The MZMTD256HAGM00000 comes with a storage capacity of 256 GB, providing ample space for a wide array of applications and files. The use of Samsung's advanced V-NAND technology enhances the drive’s performance and endurance. V-NAND architecture allows for more cells to be stacked vertically, which not only optimizes performance but also increases the storage density, leading to improved power efficiency.

In terms of performance, the Samsung MZMTD256HAGM00000 delivers impressive read and write speeds, making it an ideal choice for users seeking fast boot times and quick file transfers. Sequential read speeds can reach up to 500 MB/s, while write speeds also achieve commendable performance, catering to demanding workloads and ensuring smooth multitasking.

The drive also features Samsung’s Dynamic Thermal Guard technology, which helps maintain optimal operating temperatures. This feature protects the SSD from overheating during intense workloads, ensuring reliability and longevity of the drive. Additionally, the MZMTD256HAGM00000 is built with a robust error correction code (ECC) and supports TRIM technology, enhancing overall data integrity and performance.

Furthermore, the compact M.2 form factor of the MZMTD256HAGM00000 allows for easy installation in various computing devices, including laptops, desktops, and gaming rigs. Its lightweight design contributes to the overall efficiency and portability of the system.

In summary, the Samsung MZMTD256HAGM00000 is a powerful SSD that combines advanced technology with high storage capacity and speed. Its NVMe interface, reliability, and thermal management features make it an exceptional option for anyone looking to enhance the performance of their computing setup. Whether for gaming, content creation, or general use, the MZMTD256HAGM00000 stands out as a reliable storage solution.