Samsung MZMTD256HAGM00000 manual Component Dram Ordering Information

Models: MZMTD256HAGM00000

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COMPONENT DRAM ORDERING INFORMATION

1

2

3

4

5

6

7

8

9

10

11

K

4

T

XX

XX

X

X

X

X

X

XX

SAMSUNG Memory

DRAM

DRAM Type

Density

Bit Organization

Speed

Temp & Power

Package Type

Generation

Interface (VDD, VDDQ)

Number of Internal Banks

1.Memory (K)

2.DRAM: 4

3.DRAM Type

B:DDR3 SDRAM

D:GDDR SDRAM

G:GDDR5 SDRAM

H:DDR SDRAM

J:GDDR3 SDRAM

M:Mobile SDRAM

N:SDDR2 SDRAM

S:SDRAM

T:DDR SDRAM

U:GDDR4 SDRAM

V:Mobile DDR SDRAM Power Efficient Address

W:SDDR3 SDRAM

X:Mobile DDR SDRAM

Y:XDR DRAM

Z:Value Added DRAM

4.Density

10:1G, 8K/32ms

16:16M, 4K/64ms

26:128M, 4K/32ms

28:128M, 4K/64ms

32:32M, 2K/32ms

50:512M, 32K/16ms

51:512M, 8K/64ms

52:512M, 8K/32ms

54:256M, 16K/16ms

55:256M, 4K/32ms

56:256M, 8K/64ms

62:64M, 2K/16ms

64:64M, 4K/64ms

68:768M, 8K/64ms 1G: 1G, 8K/64ms

2G: 2G, 8K/64ms

4G: 4G, 8K/64ms

5.Bit Organization

02:x2

04: x4

06:x4 Stack (Flexframe)

07:x8 Stack (Flexframe)

08: x8

15:x16 (2CS)

16:x16

26:x4 Stack (JEDEC Standard)

27:x8 Stack (JEDEC Standard)

30:x32 (2CS, 2CKE)

31:x32 (2CS)

32:x32

6.# of Internal Banks

2:2 Banks

3:4 Banks

4:8 Banks

5:16 Banks

7.Interface ( VDD, VDDQ)

2:LVTTL, 3.3V, 3.3V

4:LVTTL, 2.5V, 2.5V

5:SSTL-2 1.8V, 1.8V

6:SSTL-15 1.5V, 1.5V

8:SSTL-2, 2.5V, 2.5V A: SSTL, 2.5V, 1.8V F: POD-15 (1.5V,1.5V)

H: SSTL_2 DLL, 3.3V, 2.5V

M: LVTTL, 1.8V, 1.5V

N: LVTTL, 1.5V, 1.5V

P: LVTTL, 1.8V, 1.8V

Q: SSTL-2 1.8V, 1.8V

R: SSTL-2, 2.8V, 2.8V

U: DRSL, 1.8V, 1.2V

8.Generation

A:2nd Generation

B:3rd Generation

C:4th Generation

D:5th Generation

E:6th Generation

F:7th Generation

G:8th Generation

H:9th Generation

I:10th Generation

J:11th Generation

K:12th Generation

M:1st Generation

N:14th Generation

Q:17th Generation

9. Package Type

DDR2 DRAM

L:TSOP II (Lead-free & Halogen-free)

H:FBGA (Lead-free & Halogen-free)

F:FBGA for 64Mb DDR (Lead-free & Halogen-free) 6: sTSOP II (Lead-free & Halogen-free)

T:TSOP II

N:sTSOP II

G:FBGA

U:TSOP II (Lead-free)

V:sTSOP II (Lead-free)

Z:FBGA (Lead-free)

DDR2 SDRAM

Z: FBGA (Lead-free)

J:FBGA DDP (Lead-free)

Q:FBGA QDP (Lead-free)

H:FBGA (Lead-free & Halogen-free)

M:FBGA DDP (Lead-free & Halogen-free)

E:FBGA QDP (Lead-free & Halogen-free)

T:FBGA DSP (Lead-free & Halogen-free, Thin)

DDR3 SDRAM

Z: FBGA (Lead-free)

H: FBGA (Halogen-free & Lead-free)

Graphics Memory

Q: TQFP

U:TQFP (Lead Free)

G:84/144 FBGA

V:144 FBGA (Lead Free)

Z:84 FBGA (Lead Free)

T:TSOP

L:TSOP (Lead Free)

A:136 FBGA

B:136 FBGA (Lead Free)

H:FBGA (Hologen Free & Lead Free)

E:100 FBGA (Hologen Free & Lead Free)

SDRAM

L TSOP II (Lead-free & Halogen-free)

N:STSOP II

T:TSOP II

U:TSOP II (Lead-free)

V:sTSOP II (Lead-free)

10DRAM Ordering Information

2H 2013

samsung.com/dram

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Samsung MZMTD256HAGM00000 manual Component Dram Ordering Information

MZMTD256HAGM00000 specifications

The Samsung MZMTD256HAGM00000 is a high-performance solid-state drive (SSD) designed to meet the demands of modern computing. As a member of Samsung's renowned line of M.2 NVMe SSDs, it offers a combination of speed, reliability, and efficiency, making it an excellent choice for both consumer and enterprise applications.

One of the key features of the MZMTD256HAGM00000 is its use of the NVMe (Non-Volatile Memory Express) interface, which drastically improves data transfer rates compared to traditional SATA interfaces. With NVMe, the drive can communicate directly with the motherboard via the PCIe (Peripheral Component Interconnect Express) bus, allowing it to leverage multiple lanes for data transfer. This results in significantly lower latency and higher throughput, which is crucial for tasks that require quick access to large files, such as video editing, gaming, and data analysis.

The MZMTD256HAGM00000 comes with a storage capacity of 256 GB, providing ample space for a wide array of applications and files. The use of Samsung's advanced V-NAND technology enhances the drive’s performance and endurance. V-NAND architecture allows for more cells to be stacked vertically, which not only optimizes performance but also increases the storage density, leading to improved power efficiency.

In terms of performance, the Samsung MZMTD256HAGM00000 delivers impressive read and write speeds, making it an ideal choice for users seeking fast boot times and quick file transfers. Sequential read speeds can reach up to 500 MB/s, while write speeds also achieve commendable performance, catering to demanding workloads and ensuring smooth multitasking.

The drive also features Samsung’s Dynamic Thermal Guard technology, which helps maintain optimal operating temperatures. This feature protects the SSD from overheating during intense workloads, ensuring reliability and longevity of the drive. Additionally, the MZMTD256HAGM00000 is built with a robust error correction code (ECC) and supports TRIM technology, enhancing overall data integrity and performance.

Furthermore, the compact M.2 form factor of the MZMTD256HAGM00000 allows for easy installation in various computing devices, including laptops, desktops, and gaming rigs. Its lightweight design contributes to the overall efficiency and portability of the system.

In summary, the Samsung MZMTD256HAGM00000 is a powerful SSD that combines advanced technology with high storage capacity and speed. Its NVMe interface, reliability, and thermal management features make it an exceptional option for anyone looking to enhance the performance of their computing setup. Whether for gaming, content creation, or general use, the MZMTD256HAGM00000 stands out as a reliable storage solution.