MEMO
4-3. CIRCUIT BOARDS LOCATION
B
T1A
4-4. PRINTED WIRING BOARDS AND SCHEMATIC DIAGRAMS
Note:
•Capacitors without voltage indication are all 50V.
•All resistors are in ohms. kΩ =1000Ω , MΩ =1000kΩ
•Indication of resistance, which dose not have one for rating electrical power, is as follows.
Pitch : 5mm
Rating electrical power : 1/ 4 W
• 
: nonflammable resistor.
• | : fusible resistor. |
•
: internal component.
•
: panel designation and adjustment for repair.
•All variable and adjustable resistors have characteristic curve B, unless otherwise noted.
•
:
•As to the voltage volue shown by the semiconductors on the Shematic Diagram, see the another list
•Readings are taken with a
• Readings are taken with a 10MΩ digital multimeter.
•Voltages are dc with respect to ground unless otherwise noted.
•Voltage variations may be noted due to normal production tolerances.
•All voltages are in V.
•Circled numbers are waveform references.
•
: B+ bus.
•
: B– bus.
•
: signal path.
Reference information
RESISTOR : RN METAL FILM
: RC SOLID
:FPRD NONFLAMMABLE CARBON
:FUSE NONFLAMMABLE FUSIBLE
| : RW | NONFLAMMABLE WIREWOUND |
| : RS | NONFLAMMABLE METAL OXIDE |
| : RB | NONFLAMMABLE CEMENT |
| : | ADJUSTMENT RESISTOR |
COIL | : | MICRO INDUCTOR |
CAPACITOR | : TA | TANTALUM |
| : PS | STYROL |
| : PP | POLYPROPYLENE |
| : PT | MYLAR |
| : MPS | METALIZED POLYESTER |
| : MPP | METALIZED POLYPROPYLENE |
| : ALB | BIPOLAR |
| : ALT | HIGH TEMPERATURE |
| : ALR | HIGH RIPPLE |
Note: The symbol 
display is on the component slde.
The components identified by shading and mark 
are critical for safety. Replace only with part number specified.
The symbol 
indicate fast operating fuse.
Replace only with fuse of same rating as maked.
Terminal name of semiconductors in silk screen
printed circuit ( * ) |
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| Device | Printed symbol | Terminal name | Circuit | ||
1 Transistor |
| Collector |
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| Base | Emitter |
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2 | Transistor |
| Collector |
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| Base | Emitter |
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3 | Diode |
| Cathode |
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| Anode |
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4 Diode |
| Cathode |
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| Anode | (NC) |
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| Cathode |
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5 | Diode |
| Anode | (NC) |
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| Common |
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6 Diode |
| Anode | Cathode |
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7 | Diode |
| Common |
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| Anode | Cathode |
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8 Diode |
| Common |
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| Anode | Anode |
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9 | Diode |
| Common |
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| Anode | Anode |
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0 Diode |
| Common |
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| Cathode | Cathode |
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!¡ | Diode |
| Common |
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| Cathode | Cathode |
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!™ |
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| Anode | Cathode |
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Diode |
| Anode | Anode |
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| Cathode | Anode |
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!£ | Transistor |
| Drain | Source |
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(FET) |
| Gate | D | D | ||
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| G | G |
!¢ | Transistor |
| Drain | Source | S | S |
(FET) |
| Gate |
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| Transistor |
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| Source | D | D |
!∞ |
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| G | G | ||
(FET) |
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| Gate | S | S | |
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!§ |
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| Emitter |
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Transistor |
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| Collector |
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| Base |
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| C1 | C2 |
!¶ | Transistor |
| C2 B1 E1 | B1 | B2 | |
| E2 B2 C1 | |||||
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| E1 | E2 | ||
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!• | Transistor |
| C1 B2 E2 |
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| E1 B1 C2 | C1 | C2 | |||
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| B1 | B2 |
!ª | Transistor |
| C1 | B2 E2 | E1 | E2 |
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| E1 B1 C2 |
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| E1 | E2 |
@º | Transistor |
| C1 B2 E2 | B1 | B2 | |
| E1 B1 C2 | |||||
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| C1 | C2 | ||
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| C1(B2) | C2 |
@¡ | Transistor |
| E2 | B1 E1 | B1 |
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| C2 | C1(B2) |
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| E2 | E2 | ||
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| (B2) | E1(B2) | E2 | |
@™ | Transistor |
| B1 E1 E2 | B1 |
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| C1 | C2 |
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| C1 | C2 | ||
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| (B2) | E1(B2) | C2 | |
@£ | Transistor |
| E2 E1 B1 | B1 |
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| C2 | C1 |
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| C1 | C2 | ||
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– | Discrete semiconductot |
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(Chip semiconductors that are not actually used are included.) | Ver.1.5 |
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– 13 – | – 14 – |
