Philips Semiconductors | Product specification |
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MMIC wideband amplifier | BGM1012 |
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FEATURES
∙Internally matched to 50 Ω
∙Very wide frequency range (4 Ghz at 3 dB bandwidth)
∙Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness)
∙10 dBm saturated output power at 1 GHz
∙High linearity (18 dBm IP3(out) at 1 GHz)
∙Low current (14.6 mA)
∙Unconditionally stable.
APPLICATIONS
∙LNB IF amplifiers
∙Cable systems
∙ISM
∙General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a
QUICK REFERENCE DATA
PINNING
PIN | DESCRIPTION |
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1 | VS |
2, 5 | GND2 |
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3 | RF out |
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4 | GND1 |
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6 | RF in |
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6 | 5 | 4 |
| 1 |
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| 6 | 3 |
1 | 2 | 3 | 4 | 2, 5 |
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Top view |
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| MAM455 |
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Marking code:
Fig.1 Simplified outline (SOT363) and symbol.
SYMBOL | PARAMETER |
| CONDITIONS | TYP. |
| MAX. | UNIT | |
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VS |
| DC supply voltage |
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| 3 | 4 |
| V |
IS |
| DC supply current |
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| 14.6 | − |
| mA |
⎪s | ⎪2 | insertion power gain | f = 1 GHz |
| 20.1 | − |
| dB |
21 |
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NF |
| noise figure | f = 1 GHz |
| 4.8 | − |
| dB |
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PL(sat) | saturated load power | f = 1 GHz |
| 9.7 | − |
| dBm |
CAUTION
This product is supplied in
2002 Sep 06 | 2 |