Philips BGM1012 specifications Input reflection coefficient s11 typical values

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Philips Semiconductors

Product specification

 

 

MMIC wideband amplifier

BGM1012

 

 

 

 

 

 

90°

 

 

 

 

 

 

+1

 

 

 

135°

+0.5

 

 

+2

45°

 

 

 

 

 

 

+0.2

 

 

 

 

+5

 

 

 

4 GHz

100 MHz

 

 

 

0.2

0.5

2

 

5

180°

 

 

0

 

 

 

 

0°

 

0.2

 

 

 

 

5

 

135°

0.5

 

 

2

45°

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

MLD910

90°

IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Ω.

1.0

0.8

0.6

0.4

0.2

0

1.0

Fig.7 Input reflection coefficient (s11); typical values.

 

 

 

90°

 

 

 

 

 

 

+1

 

 

 

 

135°

+0.5

 

 

+2

45°

 

 

 

 

 

 

+0.2

 

 

 

 

+5

 

 

 

 

100 MHz

 

 

180°

0.2

0.5

1

2

 

5

0

 

 

 

 

0°

 

 

 

4 GHz

 

 

 

 

0.2

 

 

 

 

5

 

135°

0.5

 

 

2

45°

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

MLD911

90°

IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Ω.

1.0

0.8

0.6

0.4

0.2

0

1.0

Fig.8 Output reflection coefficient (s22); typical values.

2002 Sep 06

6

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Contents Data Sheet Applications FeaturesSymbol Parameter Conditions TYP MAX Unit DescriptionSymbol Parameter Conditions MIN Thermal Characteristics Symbol Parameter ConditionsLimiting Values Characteristics Symbol Parameter Conditions MIN TYP MAX UnitMmic wideband amplifier Application InformationInput reflection coefficient s11 typical values Isolation ⎪s 12 ⎪ 2 as a function of frequency Noise figure as a function of frequency Angle Package Outline Plastic surface mounted package 6 leads SOT363Data Sheet Status Product Definitions STATUS2Disclaimers Philips Semiconductors a worldwide company