Cypress CY62128EV30 manual Features, Functional Description, Logic Block Diagram

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CY62128EV30

MoBL® 1 Mbit (128K x 8) Static RAM

Features

■Very high speed: 45 ns

❐Temperature ranges:

•Industrial: –40°C to +85°C

•Automotive-A: –40°C to +85°C

•Automotive-E: –40°C to +125°C

■Wide voltage range: 2.20V – 3.60V

■Pin compatible with CY62128DV30

■Ultra low standby power

❐Typical standby current: 1 μA

❐Maximum standby current: 4 μA

■Ultra low active power

❐Typical active current: 1.3 mA @ f = 1 MHz

■Easy memory expansion with CE1, CE2 and OE features

■Automatic power down when deselected

■CMOS for optimum speed and power

■Offered in Pb-free 32-pin SOIC, 32-pin TSOP I, and 32-pin STSOP packages

Functional Description

The CY62128EV30[1] is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW). The eight input and output pins (IO0 through IO7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE1 LOW and CE2 HIGH and WE LOW).

To write to the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. Data on the eight IO pins is then written into the location specified on the Address pin (A0 through A16).

To read from the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins.

Logic Block Diagram

 

 

 

 

 

 

 

 

A0

 

INPUT BUFFER

 

IO0

 

 

 

 

 

 

 

IO1

 

A1

 

 

 

 

 

 

 

A2

DECODERROW

 

 

 

 

AMPSSENSE

IO2

 

A8

 

 

 

 

 

A3

 

 

 

 

 

 

 

A4

 

 

 

 

 

 

IO3

 

A5

 

128K x 8

 

 

 

A6

 

 

 

 

 

 

IO4

 

A7

 

 

ARRAY

 

 

 

A9

 

 

 

 

 

 

IO5

 

A10

 

 

 

 

 

 

IO6

CE1

A11

 

 

 

 

 

 

 

 

 

 

 

 

 

IO7

CE2

WE

COLUMN DECODER

POWER

 

 

 

 

 

 

DOWN

 

 

OE

12

13

14

15

16

 

 

 

 

 

 

 

 

A

A

A

A

A

 

 

Note

1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.

Cypress Semiconductor Corporation • 198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-05579 Rev. *D

 

Revised March 28, 2008

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Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtMax Pin Configuration2Ind’l/Auto-A Auto-EMaximum Ratings Electrical CharacteristicsOperating Range Device Range AmbientCapacitance Data Retention CharacteristicsRead Cycle Switching CharacteristicsWrite Cycle Read Cycle 1 Address transition controlled 15 Switching WaveformsWrite Cycle No CE1 or CE2 controlled 10, 14, 18 Truth Table for CY62128EV30 Inputs/Outputs Mode PowerOrdering Information Package DiagramsCY62128EV30LL-45SXI 51-85081 Pin 450-Mil Soic Pb-free Pin Thin Small Outline Package Type I 8 x 20 mm Pin Shrunk Thin Small Outline Package 8 x 13.4 mm Document History Issue Date Orig. Description of ChangePCI NXR

CY62128EV30 specifications

The Cypress CY62128EV30 is a high-performance CMOS SRAM (Static Random Access Memory) device that is widely used in various applications due to its advanced technology and robust characteristics. As a 1-megabit SRAM, it features a 128K x 8 bit organization, providing ample storage capacity for a range of modern electronic devices.

One of the key features of the CY62128EV30 is its fast access time, with read cycle times available in the range of 30 to 70 nanoseconds. This rapid access speed is essential for applications that require quick data retrieval, making it ideal for use in high-speed computing environments. Additionally, it boasts a low power consumption profile, typically operating at 2.7V to 3.6V, allowing it to meet the demands of power-sensitive applications while ensuring energy efficiency.

In terms of technology, the CY62128EV30 utilizes advanced CMOS processes that contribute to its smaller footprint and higher reliability. The device includes a full asynchronous design, allowing for simple interface with other digital logic components without the need for complicated timing signals. This characteristic simplifies the overall system design, making it easier to integrate into various circuit configurations.

The CY62128EV30 also offers a wide operational temperature range, typically from -40°C to +85°C, which enhances its suitability for use in harsh environments or industrial applications. This durability ensures that the device maintains its performance specifications even under extreme conditions.

Moreover, the device features a tri-state output and supports both read and write operations with a single chip select pin, enhancing its versatility in multiple configurations. The ability to easily interface in a variety of systems makes it a preferred choice for designs requiring flexible memory solutions.

The CY62128EV30 is compatible with standard microprocessor architectures, making it ideal for use in applications such as networking equipment, telecommunications, consumer electronics, and embedded systems. Its reliability, combined with efficient power management and fast access speeds, make it a trusted solution in the fast-evolving technology landscape.

In conclusion, the Cypress CY62128EV30 stands out due to its combination of speed, power efficiency, and operational versatility, making it a valuable component in contemporary electronic design. Its cutting-edge technology and features cater to the growing demands of high-performance applications across various industries.
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