Cypress CY7C1231H manual Switching Characteristics Over the Operating Range 12

Page 8

CY7C1231H

Switching Characteristics Over the Operating Range [12, 13]

 

 

 

 

 

 

 

 

 

 

 

-133

 

Parameter

 

 

 

 

 

 

 

 

Description

 

 

 

Unit

 

 

 

 

 

 

 

 

Min.

 

Max.

 

 

 

 

 

 

 

tPOWER

 

VDD(Typical) to the first Access[14]

1

 

 

ms

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

7.5

 

 

ns

tCH

 

Clock HIGH

2.5

 

 

ns

tCL

 

Clock LOW

2.5

 

 

ns

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCDV

 

Data Output Valid after CLK Rise

 

 

6.5

ns

tDOH

 

Data Output Hold after CLK Rise

2.0

 

 

ns

tCLZ

 

Clock to Low-Z[15, 16, 17]

0

 

 

ns

tCHZ

 

Clock to High-Z[15, 16, 17]

 

 

3.5

ns

tOEV

 

 

 

LOW to Output Valid

 

 

3.5

ns

 

OE

 

 

tOELZ

 

 

 

LOW to Output Low-Z[15, 16, 17]

0

 

 

ns

 

OE

 

 

tOEHZ

 

 

 

HIGH to Output High-Z[15, 16, 17]

 

 

3.5

ns

 

OE

 

 

Set-up Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Set-up before CLK Rise

1.5

 

 

ns

tALS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV/LD

 

Set-up before CLK Rise

1.5

 

 

ns

tWES

 

 

 

 

 

 

 

 

[A:B] Set-up before CLK Rise

1.5

 

 

ns

 

WE,

BW

 

 

tCENS

 

 

 

 

Set-up before CLK Rise

1.5

 

 

ns

CEN

 

 

tDS

 

Data Input Set-up before CLK Rise

1.5

 

 

ns

tCES

 

Chip Enable Set-up before CLK Rise

1.5

 

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold after CLK Rise

0.5

 

 

ns

tALH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV/LD

Hold after CLK Rise

0.5

 

 

ns

tWEH

 

 

 

 

 

 

 

[A:B] Hold after CLK Rise

0.5

 

 

ns

 

WE,

BW

 

 

tCENH

 

 

 

 

Hold after CLK Rise

0.5

 

 

ns

 

CEN

 

 

tDH

 

Data Input Hold after CLK Rise

0.5

 

 

ns

tCEH

 

Chip Enable Hold after CLK Rise

0.5

 

 

ns

Notes:

12.Timing reference level is 1.5V when VDDQ = 3.3V and 1.25V when VDDQ = 2.5V.

13.Test conditions shown in (a) of AC Test Loads, unless otherwise noted.

14.This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a read or write operation can be initiated.

15.tCHZ, tCLZ, tOELZ, and tOEHZ are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

16.At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve tri-state prior to Low-Z under the same system conditions.

17.This parameter is sampled and not 100% tested.

Document #: 001-00207 Rev. *B

Page 8 of 12

[+] Feedback

Image 8
Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationPin Configuration Selection GuideCY7C1231H 133 MHz UnitPin Definitions Sleep Mode Functional OverviewLinear Burst Address Table Mode = GND Truth Table for Read/Write 2Ambient Range Maximum RatingsOperating Range AC Test Loads and Waveforms Capacitance11Thermal Resistance11 Switching Characteristics Over the Operating Range 12 Read/Write Waveforms 18, 19 Switching WaveformsCommand ZZ Mode Timing22 NOP, Stall and Deselect Cycles18, 19Pin Tqfp 14 x 20 x 1.4 mm Package DiagramOrdering Information Issue Date Orig. Description of Change Document HistoryPCI NXR