Cypress CY7C199 manual Read Cycle No 13, Write Cycle No WE Controlled10, 15

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			CY7C199
Switching Waveforms (continued)
Read Cycle No. 2 [13, 14]
CE		tRC
CE
	tACE
OE
	tDOE	tHZOE
	tDOE	tHZCE
	tLZOE	tHZCE	HIGH
	tLZOE		HIGH
DATA OUT	HIGH IMPEDANCE	DATA VALID	IMPEDANCE
DATA OUT		DATA VALID
	tLZCE	tPD
	tPU	tPD
VCC	tPU		ICC
SUPPLY	50%		50%
CURRENT			ISB
			C199–9

Write Cycle No. 1 (WE Controlled)[10, 15, 16]

	tWC
ADDRESS
CE
tAW		tHA
tSA	tPWE
WE
OE
	tSD	t
		HD
DATA I/O	DATAIN VALID
tHZOE		C199–10

Write Cycle No. 2 (CE Controlled)[10, 15, 16]

	tWC
ADDRESS
CE	tSCE
tSA
tAW		tHA
WE
	tSD	tHD
DATA I/O	DATA IN VALID	C199–11
		C199–11
Notes:

14.Address valid prior to or coincident with CE transition LOW.

15.Data I/O is high impedance if OE = VIH.

16.If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.

Document #: 38-05160 Rev. **

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Contents Selection Guide FeaturesLogic Block Diagram Pin Configurations Functional DescriptionMaximum Ratings Electrical Characteristics Over the Operating Range3Operating Range Parameter Description Test Conditions Max Unit Capacitance4Data Retention Waveform AC Test Loads and Waveforms5Parameter Description Conditions6 Min Max Unit Read Cycle Switching Characteristics Over the Operating Range3Read Cycle No Switching WaveformsWrite Cycle No WE Controlled10, 15 Read Cycle No 13Write Cycle No CE Controlled10, 15 Write Cycle No WE Controlled OE LOW11 Typical DC and AC CharacteristicsTruth Table Inputs/Outputs Mode PowerOrdering Information Ordering Code Name Package Type Range SpeedSwitching Characteristics Group a Subgroup Testing DC CharacteristicsParameter Subgroups Lead 300-Mil CerDIP D22 Package DiagramsLead 300-Mil Molded DIP P21 Pin Rectangular Leadless Chip Carrier L54Lead 300-Mil Molded SOJ Lead 300-Mil Molded Soic S21Lead Thin Small Outline Package Z28 Date Change Description of Change REV ECN no