Cypress CY7C1034DV33 Maximum Ratings, Operating Range, DC Electrical Characteristics, Capacitance

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CY7C1034DV33

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

Power Applied

–55°C to +125°C

Supply Voltage on VCC Relative to GND [2]....–0.5V to +4.6V

DC Voltage Applied to Outputs

 

in High Z State [2]

–0.5V to V + 0.5V

 

CC

DC Input Voltage [2]

 

–0.5V to V + 0.5V

 

 

 

CC

Current into Outputs (LOW)

20 mA

Static Discharge Voltage

>2001V

(MIL-STD-883, Method 3015)

 

 

Latch up Current

 

 

>200 mA

Operating Range

 

 

 

 

 

 

Range

Ambient

 

VCC

Temperature

 

Industrial

–40°C to +85°C

 

3.3V ± 0.3V

 

 

 

 

DC Electrical Characteristics

Over the operating range

Parameter

Description

 

 

 

Test Conditions [3]

 

–10

Unit

 

 

 

Min

 

Max

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

VCC = Min, IOH = –4.0 mA

2.4

 

 

V

VOL

Output LOW Voltage

VCC = Min, IOL = 8.0 mA

 

 

0.4

V

VIH

Input HIGH Voltage

 

 

 

 

 

2.0

 

VCC + 0.3

V

VIL [2]

Input LOW Voltage

 

 

 

 

 

–0.3

 

0.8

V

IIX

Input Leakage Current

GND < VI < VCC

–1

 

+1

μA

IOZ

Output Leakage Current

GND < VOUT < VCC, output disabled

–1

 

+1

μA

ICC

VCC Operating Supply

VCC = Max, f = fMAX = 1/tRC,

 

 

175

mA

 

Current

IOUT = 0 mA CMOS levels

 

 

 

 

ISB1

Automatic CE Power Down

Max VCC,

 

1,

 

3 > VIH, CE2 < VIL,

 

 

30

mA

CE

CE

 

 

Current — TTL Inputs

VIN > VIH or VIN < VIL, f = fMAX

 

 

 

 

ISB2

Automatic CE Power Down

Max VCC,

 

1,

 

3 > VCC – 0.3V, CE2 < 0.3V,

 

 

25

mA

CE

CE

 

 

Current — CMOS Inputs

VIN > VCC – 0.3V, or VIN < 0.3V, f = 0

 

 

 

 

Capacitance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz, VCC = 3.3V

8

pF

COUT

IO Capacitance

 

10

pF

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

Test Conditions

119-Ball

Unit

PBGA

 

 

 

 

ΘJA

Thermal Resistance

Still air, soldered on a 3 × 4.5 inch,

20.31

°C/W

 

(Junction to Ambient)

four layer printed circuit board

 

 

ΘJC

Thermal Resistance

 

8.35

°C/W

 

(Junction to Case)

 

 

 

Notes

2.VIL (min) = –2.0V and VIH(max) = VCC + 2V for pulse durations of less than 20 ns.

3.CE refers to a combination of CE1, CE2, and CE3. CE is active LOW when CE1 is LOW, CE2 is HIGH, and CE3 is LOW. CE is HIGH when CE1 is HIGH or CE2 is LOW or CE3 is HIGH.

Document Number: 001-08351 Rev. *C

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesLogic Block Diagram Functional DescriptionPin Configuration Selection GuideDescription Unit Capacitance DC Electrical CharacteristicsMaximum Ratings Operating RangeAC Switching Characteristics OutputParameter Description Unit Min Max Read Cycle Data Retention Characteristics Parameter Description Conditions Min TypCE2 Read Cycle No Address Transition Controlled 13 Switching WaveformsTruth Table IO 0 IO Mode PowerOrdering Information Package DiagramSales, Solutions, and Legal Information Document HistoryOrig. Submission Description of Change Date