Samsung S3F80JB manual Characteristics of Low Voltage Detect Circuit, Parameter Symbol Conditions

ELECTRICAL DATA (4MHz) S3F80JB

Table 17-2. D.C. Electrical Characteristics (Continued)

(TA = – 25 °C to + 85 °C, VDD = 1.7 V to 3.6 V)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Current	IDD1	Operating Mode	–	5	9	mA
(note)		VDD = 3.6 V
		4 MHz crystal
	IDD2	Idle Mode	–	1.0	2.5
		VDD =3.6 V
		4 MHz crystal
	IDD3	Stop Mode	–	1	6	uA
		LVD OFF, VDD = 3.6 V
		Stop Mode	–	10	20
		LVD ON, VDD = 3.6 V

NOTE: Supply current does not include current drawn through internal pull-up resistors or external output current loads.

Table 17-3. Characteristics of Low Voltage Detect Circuit

(TA = – 25 °C to + 85 °C)

Parameter	Symbol	Conditions
Hysteresys voltage of LVD	∆V	–
(Slew Rate of LVD)
Low level detect voltage for	LVD	–
back-up mode
Low level detect voltage for	LVD_FLAG	–
flag indicator

Min

–

1.7

1.95

Typ	Max	Unit
100	300	mV
1.9	2.1	V
2.15	2.35	V

NOTE: The voltage gap between LVD and LVD FLAG is 250mV.

Table 17-4. Data Retention Supply Voltage in Stop Mode

(TA = – 25 °C to + 85 °C)

Parameter	Symbol	Conditions
Data retention supply	VDDDR	–
voltage
Data retention supply	IDDDR	VDDDR = 1.5 V
current		Stop Mode

Min

1.5

–

Typ	Max	Unit
–	3.6	V
–	1	∝A

17-4