Samsung S3F80JB manual Output Low, VDD = 2.1 V, IOL = 12mA Voltage Port 3.1 only, Port4 Input High

S3F80JB ELECTRICAL DATA (4MHz)

Table 17-2. D.C. Electrical Characteristics (Continued)

(TA = – 25 °C to + 85 °C, VDD = 1.7 V to 3.6 V)

Parameter	Symbol			Conditions	Min	Typ	Max	Unit
Output Low	VOL1	VDD = 2.1 V, IOL = 12mA			–	0.4	0.5	V
Voltage		Port 3.1 only
	VOL2	VDD = 2.1 V, IOL = 5mA				0.4	0.5
		P3.0 and P2.0-2.3
	VOL3	VDD = 2.35 V, IOH = – 1mA				0.4	1.0
		Port0, Port1, P2.4-2.7, P3.4-3.5 and
		Port4
Input High	ILIH1	VIN = VDD			–	–	1	∝A
Leakage Current		All input pins except ILIH2 and XOUT
	ILIH2	VIN = VDD , XIN					20
Input Low	ILIL1	VIN = 0 V			–	–	– 1	∝A
Leakage Current		All input pins except ILIL2 and XOUT
	ILIL2	VIN = 0 V, XIN					– 20
Output High	ILOH	VOUT = VDD			–	–	1	∝A
Leakage Current		All output pins
Output Low	ILOL	VOUT = 0 V			–	–	– 1	∝A
Leakage Current		All output pins
Pull-Up	RL1	VIN = 0 V, VDD = 2.1 V			40	90	150	kΩ
Resistors		TA = 25°C, Ports 0–4
	RL2	VIN = 0 V, VDD = 2.1 V			200	700	1200	kΩ
		TA = 25°C, nRESET
Feed Back	RFD	VIN = VDD, VDD = 2.1 V			500	900	1500	kΩ
Resistor		T	A	= 25°C, X
				IN

17-3