Samsung S3F80JB manual Typical VDD-VOHVDD=3.3V

S3F80JB ELECTRICAL DATA (4MHz)

TYPICAL VDD-VOH(VDD=3.3V)

	1.20	85°C
	1.00	25°C
VDD-VOH(V)		−25°C
	0.80
	0.60
	0.40
	0.20
	0.00
	0	2	4	6	8	10	12
				IOH(mA)

TYPICAL VDD-VOH VS VDD(IOH=−2.2mA)

	0.6				85°C
	0.5				25°C
					−25°C
-VOH(V)	0.4
	0.3
VDD	0.2
	0.1
	0	2.3	2.8	3.3	3.8
	1.8V
			VDD(V)

Figure 17-5. Typical High-Side Driver (Source) Characteristics (P3.0 and P2.0-2.3)

TYPICAL VDD-VOH(VDD=3.3V)

	1.20	85°C
	1.00	25°C
		−25°C
VDD-VOH(V)	0.80
	0.60
	0.40
	0.20
	0.00
	0	1	2	3	4	5	6
				IOH(mA)

TYPICAL VDD-VOH VS VDD(IOH=−1mA)

	0.45				85°C
	0.4
					25°C
	0.35				−25°C
VDD-VOH(V)	0.3
	0.25
	0.2
	0.15
	0.1
	0.05
	0
	1.8V	2.3	2.8	3.3	3.8
			VDD(V)

Figure 17-6. Typical High-Side Driver (Source) Characteristics (Port0, Port1, P2.4-2.7, P3.4-P3.5 and Port4)

NOTE: Figure 17-5 and 17-6 are characterized and not tested on each device.

17-7