Samsung S3F80JB manual TA = 25 C to + 85 C, VDD = 1.95 V to 3.6, Fosc = 8 MHz Input High Voltage

ELECTRICAL DATA (8MHz) S3F80JB

Table 18-1. Absolute Maximum Ratings

(TA = 25 °C)

Parameter	Symbol	Conditions	Rating	Unit
Supply Voltage	VDD	–	– 0.3 to + 3.8	V
Input Voltage	VIN	–	– 0.3 to VDD + 0.3	V
Output Voltage	VO	All output pins	– 0.3 to VDD + 0.3	V
Output Current High	IOH	One I/O pin active	– 18
		All I/O pins active	– 60	mA
Output Current Low	IOL	One I/O pin active	+ 30
		All I/O pins active	+ 150	mA
Operating	TA	–	– 25 to + 85	°C
Temperature
Storage	TSTG	–	– 65 to + 150	°C
Temperature
Electrostatic	VESD	HBM	2000	V
discharge		MM	200

Table 18-2. D.C. Electrical Characteristics

(TA = – 25 °C to + 85 °C, VDD = 1.95 V to 3.6 V)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Operating Voltage	VDD	FOSC = 8 MHz	1.95	–	3.6	V
Input High Voltage	VIH1	All input pins except VIH2 and VIH3	0.8 VDD	–	VDD	V
	VIH2	nRESET	0.85 VDD		VDD
	VIH3	XIN	VDD – 0.3		VDD
Input Low Voltage	VIL1	All input pins except VIL2 and VIL3	0	–	0.2 VDD	V
	VIL2	nRESET			0.2 VDD
	VIL3	XIN			0.3
Output High	VOH1	VDD = 2.35 V, IOH = – 6mA	VDD – 0.7			V
Voltage		Port 3.1 only
	VOH2	VDD = 2.35 V, IOH = – 2.2mA	VDD – 0.7	–	–
		P3.0 and P2.0-2.3
	VOH3	VDD = 2.35 V, IOH = – 1mA	VDD – 1.0
		Port0, Port1, P2.4-2.7, P3.4-3.5
		and Port4

18-2