Samsung S3F80JB manual Operating Mode DD = 3.6 MHz crystal, Idle Mode DD =3.6 MHz crystal

ELECTRICAL DATA (8MHz) S3F80JB

Table 18-2. D.C. Electrical Characteristics (Continued)

(TA = – 25 °C to + 85 °C, VDD = 1.95 V to 3.6 V)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Current	IDD1	Operating Mode	–	5	9
(note)		VDD = 3.6 V				mA
		8 MHz crystal
	IDD2	Idle Mode	–	1.0	2.5
		VDD =3.6 V
		8 MHz crystal
	IDD3	Stop Mode	–	1	6
		LVD OFF, VDD = 3.6 V				uA
		Stop Mode	–	10	20
		LVD ON, VDD = 3.6 V

NOTE: Supply current does not include current drawn through internal pull-up resistors or external output current loads.

Table 18-3. Characteristics of Low Voltage Detect Circuit

(TA = – 25 °C to + 85 °C)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Hysteresis Voltage of LVD	∆V	–	–	100	300	mV
(Slew Rate of LVD)
Low Level Detect Voltage	LVD	–	1.95	2.15	2.35	V
For Back-Up Mode
Low Level Detect Voltage	LVD_FLAG	–	2.1	2.3	2.5	V
For Flag Indicator

NOTE: The voltage gap between LVD and LVD FLAG is 150mV.

Table 18-4. Data Retention Supply Voltage in Stop Mode

(TA = – 25 °C to + 85 °C)

Parameter	Symbol	Conditions		Min	Typ	Max	Unit
Data Retention Supply	VDDDR	–		1.5	–	3.6	V
Voltage
Data Retention Supply	IDDDR	VDDDR = 1.5	V	–	–	1	∝A
Current		Stop Mode

18-4