Samsung S3F80JB manual Programming TIP Programming Case1 -Byte Programming

Models: S3F80JB

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S3F80JBEMBEDDED FLASH MEMORY INTERFACE

PROGRAMMING TIP — Programming

Case1. 1-Byte Programming

 

 

 

 

WR_BYTE:

 

; Write data “AAH” to destination address 4010H

SB1

 

 

LD

FMUSR,#0A5H

; User program mode enable

LD

FMCON,#01010000B

; Selection programming mode

LD

FMSECH, #40H

; Set the base address of sector (4000H)

LD

FMSECL, #00H

 

LD

R9,#0AAH

; Load data “AA” to write

LD

R10,#40H

; Load flash memory upper address into upper register of pair working

 

 

; register

LD

R11,#10H

; Load flash memory lower address into lower register of pair working

 

 

; register

LDC

@RR10,R9

; Write data 'AAH' at flash memory location (4010H)

LD

FMUSR,#00H

; User program mode disable

SB0

 

 

Case2. Programming in the same sector

 

 

 

 

WR_INSECTOR:

; RR10-->Address copy (R10 –high address,R11-low address)

LD

R0,#40H

 

SB1

 

 

LD

FMUSR,#0A5H

; User program mode enable

LD

FMCON,#01010000B

; Selection programming mode and Start programming

LD

FMSECH,#40H

; Set the base address of sector located in target address to write data

LD

FMSECL,#00H

; The sector 128’s base address is 4000H.

LD

R9,#33H

; Load data “33H” to write

LD

R10,#40H

; Load flash memory upper address into upper register of pair working

 

 

; register

LD

R11,#40H

; Load flash memory lower address into lower register of pair working

WR_BYTE:

 

; register

 

 

LDC

@RR10,R9

; Write data '33H' at flash memory location

INC

R11

; Reset address in the same sector by INC instruction

DJNZ

R0,WR_BYTE

; Check whether the end address for programming reach 407FH or not.

LD

FMUSR,#00H

; User Program mode disable

SB0

 

 

15-15

Page 294
Image 294
Samsung S3F80JB manual Programming TIP Programming Case1 -Byte Programming, Case2. Programming in the same sector