Samsung S3F80JB manual Parameter Symbol Conditions Min Typ Max Unit

S3F80JB ELECTRICAL DATA (8MHz)

Minimun Instruction

Clock

2 MHz

1.5MHz

1MHz

500 kHz

250 kHz

1kHz

fOSC

(Main Oscillator Frequency)

A	8 MHz
	6 MHz
	4 MHz
	2 MHz

1 MHz

400 kHz

1 2 3 4 5 6 7

Supply Voltage (V)

Minimun Instruction Clock = 1/4n x oscillator frequency (n = 1, 2, 8, or 16)

A: 1.95 V, 8 MHz

Figure 18-12. Operating Voltage Range of S3F80JB

Table 18-10. AC Electrical Characteristics for Internal Flash ROM

(TA = –25 °C to + 85 °C)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Flash Erase/Write/Read Voltage	Fewrv	VDD	1.95	3.3	3.6	V
Programming Time (1)	Ftp		32	–	60	∝S
Sector Erasing Time (2)	Ftp1		10	–	20	mS
Chip Erasing Time (3)	Ftp2		50	–	100	mS
Data Access Time	FtRS	VDD = 2.0 V	–	250	–	nS
Number of Writing/Erasing	FNwe	–	10,000	–	–	Times
Data Retention	Ftdr	–	10	–	–	Years

1.The programming time is the time during which one byte (8-bit) is programmed.

2.The Sector erasing time is the time during which all 128-bytes of one sector block is erased.

3.In the case of S3F80JB, the chip erasing is available in Tool Program Mode only.

18-13