Samsung S3F80JB manual Sector Erasing Time, Chip Erasing Time, Data Access Time, Data Retention

S3F80JB ELECTRICAL DATA (4MHz)

Minimun Instruction Clock

2 MHz 1.5MHz

1MHz 500 kHz

250 kHz 1kHz

fOSC

(Main Oscillator Frequency)

8 MHz

6 MHz

A

4 MHz

2 MHz

1 MHz

400 kHz

1	2	3	4	5	6	7
		Supply Voltage (V)

Minimun Instruction Clock = 1/4n x oscillator frequency (n = 1, 2, 8, or 16)

A: 1.7 V, 4 MHz

Figure 17-12. Operating Voltage Range of S3F80J9

Table 17-9. AC Electrical Characteristics for Internal Flash ROM

(TA = – 25 °C to + 85 °C)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Flash Write/Erase Voltage	Fwe		1.95	–	3.6	V
Flash Read Voltage	Frv		1.7	–	3.6	V
Programming Time (1)	Ftp		32	–	60	∝S
Sector Erasing Time (2)	Ftp1		10	–	20	mS
Chip Erasing Time (3)	Ftp2		50	–	100	mS
Data Access Time	FtRS	VDD = 2.0 V	–	250	–	nS
Number of Writing/Erasing	FNwe	–	10,000	–	–	Times
Data Retention	Ftdr	–	10	–	–	Years

NOTES:

1.The programming time is the time during which one byte (8-bit) is programmed.

2.The Sector erasing time is the time during which all 128-bytes of one sector block is erased.

3.In the case of S3F80J9, the chip erasing is available in Tool Program Mode only.

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