ELECTRICAL DATA (4MHz)

S3F80JB

 

 

Table 17-1. Absolute Maximum Ratings

(TA = 25 °C)

Parameter

Symbol

Conditions

Rating

Unit

Supply Voltage

VDD

– 0.3 to + 3.8

V

Input Voltage

VIN

– 0.3 to VDD + 0.3

V

Output Voltage

VO

All output pins

– 0.3 to VDD + 0.3

V

Output Current High

IOH

One I/O pin active

– 18

mA

 

 

All I/O pins active

– 60

 

 

 

 

 

 

Output Current Low

IOL

One I/O pin active

+ 30

mA

 

 

All I/O pins active

+ 150

 

Operating

TA

– 25 to + 85

°C

Temperature

 

 

 

 

Storage

TSTG

– 65 to + 150

°C

Temperature

 

 

 

 

Electrostatic

VESD

HBM

2000

V

Discharge

 

MM

200

 

 

 

 

Table 17-2. D.C. Electrical Characteristics

(TA = – 25 °C to + 85 °C, VDD = 1.7 V to 3.6 V)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Operating Voltage

VDD

FOSC = 4 MHz

1.7

3.6

V

Input High Voltage

VIH1

All input pins except VIH2 and VIH3

0.8 VDD

VDD

V

 

VIH2

nRESET

0.85 VDD

 

VDD

 

 

VIH3

XIN

VDD – 0.3

 

VDD

 

Input Low Voltage

VIL1

All input pins except VIL2 and VIL3

0

0.2 VDD

V

 

VIL2

nRESET

 

 

0.2 VDD

 

 

VIL3

XIN

 

 

0.3

 

Output High

VOH1

VDD = 2.1 V, IOH = – 6mA

VDD – 1.0

 

 

V

Voltage

 

Port 3.1 only

 

 

 

 

 

 

 

 

 

 

 

 

VOH2

VDD = 2.1 V, IOH = – 2.2mA

VDD 1.0

 

 

 

P3.0 and P2.0-2.3

 

 

 

 

 

VOH3

VDD = 2.35 V, IOH = – 1mA

VDD 1.0

 

 

 

 

 

Port0, Port1, P2.4-2.7, P3.4-3.5

 

 

 

 

 

 

and Port4

 

 

 

 

17-2

Page 302
Image 302
Samsung S3F80JB manual Absolute Maximum Ratings, Parameter Symbol Conditions Rating Unit, D.C. Electrical Characteristics