Samsung S3F80JB manual Typical High-Side Driver Source Characteristics P3.1 only

ELECTRICAL DATA (4MHz) S3F80JB

TYPICAL VOL vs IOL(VDD=3.3V)

	1.00	85°C
	0.80	25°C
		−25°C
VOL(V)	0.60
	0.40
	0.20
	0.00
	0	5	10	15
			IOL(mA)

TYPICAL VOL VS VDD(IOL=2mA)

	160			85°C
	140
				25°C
	120			−25°C
VOL(mV)	100
	80
	60
	40
	20
	0
	1.800V	2.400V	3.000V	3.600V
			VDD(V)

Figure 17-3. Typical Low-Side Driver (Sink) Characteristics (Port0, Port1, P2.4-2.7, P3.4-P3.5 and Port4)

TYPICAL VDD-VOH(VDD=3.3V)

	1.20	85°C
	1.00	25°C
		−25°C
VDD-VOH(V)	0.80
	0.60
	0.40
	0.20
	0.00
	0	5	10	15	20	25
			IOH(mA)

TYPICAL VDD-VOH VS VDD(IOH=−6mA)

	0.7				85°C
	0.6				25°C
	0.5				−25°C
VDD-VOH(V)
	0.4
	0.3
	0.2
	0.1
	0
	1.8V	2.3	2.8	3.3	3.8V
			VDD(V)

Figure 17-4. Typical High-Side Driver (Source) Characteristics (P3.1 only)

NOTE: Figure 17-3 and 17-4 are characterized and not tested on each device.

17-6