Samsung S3F80JB manual VDD = 2.35 V, IOL = 12mA, VDD = 2.35 V, IOL = 5mA, VDD = 2.35 V, IOL = 2mA

S3F80JB ELECTRICAL DATA (8MHz)

Table 18-2. D.C. Electrical Characteristics (Continued)

(TA = – 25 °C to + 85 °C, VDD = 1.95 V to 3.6 V)

Parameter	Symbol			Conditions
Output Low	VOL1	VDD = 2.35 V, IOL = 12mA
Voltage		Port 3.1 only
	VOL2	VDD = 2.35 V, IOL = 5mA
		P3.0 and P2.0-2.3
	VOL3	VDD = 2.35 V, IOL = 2mA
		Port0, Port1, P2.4-2.7, P3.4-3.5
		and Port4
Input High	ILIH1	VIN = VDD
Leakage Current		All input pins except ILIH2 and
		XOUT
	ILIH2	VIN = VDD , XIN
Input Low	ILIL1	VIN = 0 V
Leakage Current		All input pins except ILIL2 and
		XOUT
	ILIL2	VIN = 0 V, XIN
Output High	ILOH	VOUT = VDD
Leakage Current		All output pins
Output Low	ILOL	VOUT = 0 V
Leakage Current		All output pins
Pull-Up Resistors	RL1	VIN = 0 V, VDD = 2.35 V
		TA = 25°C, Ports 0–4
	RL2	VIN = 0 V, VDD = 2.35 V
		TA = 25°C, nRESET
Feedback	Rfd	VIN = VDD, VDD=2.35V
Resistor		T	A	= 25°C, X
				IN

Min

–

–

–

–

–

44

200

300

Typ	Max	Unit
0.4	0.5	V

0.40.5

0.41.0

–	1	∝A
	20
–	– 1	∝A
	– 20
–	1	∝A
–	– 1	∝A
70	95	k Ω
500	1000	kΩ
700	1500	kΩ

18-3