Samsung S3F80JB manual WRINSECTOR2, LD FMSECH,#01H, Call Wrbyte, WRINSECTOR50 FMSECH,#19H, WRBYTE1

EMBEDDED FLASH MEMORY INTERFACE S3F80JB

Case3. Programming to the flash memory space located in other sectors

•

•

WR_INSECTOR2:

LD R0,#40H

LD R1,#40H

SB1
LD	FMUSR,#0A5H	; User program mode enable
LD FMCON,#01010000B		; Selection programming mode and Start programming
LD FMSECH,#01H		; Set the base address of sector located in target address to write data
LD	FMSECL,#00H	; The sector 2’s base address is 100H
LD	R9,#0CCH	; Load data “CCH” to write
LD	R10,#01H	; Load flash memory upper address into upper register of pair working
		; register
LD	R11,#40H	; Load flash memory lower address into lower register of pair working
CALL	WR_BYTE	; register
LD	R0,#40H
WR_INSECTOR50:
LD	FMSECH,#19H	; Set the base address of sector located in target address to write data
LD	FMSECL,#00H	; The sector 50’s base address is 1900H
LD	R9,# 55H	; Load data “55H” to write
LD	R10,#19H	; Load flash memory upper address into upper register of pair working
		; register
LD	R11,#40H	; Load flash memory lower address into lower register of pair working
CALL	WR_BYTE	; register
WR_INSECTOR128:
LD	FMSECH,#40H	; Set the base address of sector located in target address to write data
LD	FMSECL,#00H	; The sector 128’s base address is 4000H
LD	R9,#0A3H	; Load data “A3H” to write
LD	R10,#40H	; Load flash memory upper address into upper register of pair working
		; register
LD	R11,#40H	; Load flash memory lower address into lower register of pair working
WR_BYTE1:		; register
LDC	@RR10,R9	; Write data 'A3H' at flash memory location
INC	R11
DJNZ	R1,WR_BYTE1
LD	FMUSR,#00H	; User Program mode disable
SB0
•
•
WR_BYTE:
LDC	@RR10,R9	; Write data written by R9 at flash memory location
INC	R11
DJNZ	R0,WR_BYTE
RET

15-16