Cypress CY7C1336H manual Write Cycle Timing16, Clk, Adsc, Adv, DON’T Care

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PRELIMINARYCY7C1336H

Timing Diagrams (continued)

Write Cycle Timing[16, 17]

tCYC

CLK

tCH tCL

tADS tADH

ADSP

tADS tADH

ADSC

tAS tAH

ADDRESS A1 A2

Byte write signals are ignored for first cycle when

ADSP initiates burst.

BWE,

BW[A:D]

t t

WES WEH

ADSC extends burst.

tADS tADH

tWES tWEH

tCES tCEH

ADV

Data in (D)

High-Z

Data Out (Q)

tOEHZ

tDS t DH

D(A1)

tADVS tADVH

ADV suspends burst.

D(A2)

D(A2 + 1)

D(A2 + 2)

D(A2 + 3)

D(A3)

D(A3 + 1)

D(A3 + 2)

BURST READ

Single WRITE

BURST WRITE

Extended BURST WRITE

DON’T CARE

UNDEFINED

Note:

17. Full width Write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW[A:D] LOW.

Document #: 001-00210 Rev. *A

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional Description1133 MHz 100 MHz Unit Pin ConfigurationSelection Guide 15CY7C1336HPin Definitions Functional Overview Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND Cycle Description Used ZZ Mode Electrical CharacteristicsParameter Description Test Conditions Min Max Unit AddressBWE Truth Table for Read/Write 2Function Range Maximum RatingsOperating Range AmbientParameter Description Test Conditions Tqfp Unit Capacitance9Thermal Resistance9 AC Test Loads and WaveformsSwitching Characteristics Over the Operating Range 10 Read Cycle Timing16 Timing DiagramsADV Write Cycle Timing16CLK AdscBurst Read Read/Write Timing16, 18Adsp Adsc AddressZZ Mode Timing20 Pin Tqfp 14 x 20 x 1.4 mm Package DiagramOrdering Information REV ECN no Issue Date Orig. Description of ChangeDocument History

CY7C1336H specifications

The Cypress CY7C1336H is a high-performance static random-access memory (SRAM) device that has gained recognition for its outstanding speed and reliability. This component is widely used in various high-performance applications including networking, telecommunications, and industrial control systems, where fast data storage and retrieval are critical.

One of the main features of the CY7C1336H is its high-speed operation, offering access times of as low as 10 nanoseconds. This makes it ideal for applications that require quick response times and efficient processing. The device operates with a supply voltage of 2.5V, which not only helps in reducing power consumption but also enables its use in newer low-voltage systems.

The CY7C1336H boasts a capacity of 1 megabit, organized in a configuration of 128K words by 8 bits. This allows it to store a significant amount of data while maintaining a compact footprint. In addition to its size, the device supports a burst mode, which enhances its efficiency in handling data transfer operations. This feature is particularly useful in applications requiring continuous data streaming, such as video processing or high-speed networking.

The memory technology employed in the CY7C1336H is known for its robustness and durability. Unlike DRAM, SRAM does not require periodic refreshing, which simplifies system design and improves overall performance. The device also features fast output enable and chip enable options, providing greater flexibility in controlling memory access and improving overall system response time.

In terms of packaging, the CY7C1336H is available in various forms including 32-pin SOJ and 44-pin TSOP packages, catering to diverse design requirements. Its compact packaging and low thermal characteristics make it suitable for space-constrained applications.

Another noteworthy characteristic of this SRAM is its inherent data integrity and reliability. With features such as on-chip parity generation and error checking capabilities, the CY7C1336H ensures that the data stored remains accurate and consistent over time.

Overall, the Cypress CY7C1336H delivers a blend of high speed, low power consumption, and reliability, making it an excellent choice for designers looking to implement high-performance memory solutions in their applications. Its combination of lasting performance and advanced features secures its place in both current and future electronic designs.