Cypress manual Selection Guide, Pin Configuration, 15CY7C1336H, MHz 100 MHz Unit

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PRELIMINARY

 

CY7C1336H

 

Selection Guide

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

133 MHz

 

100 MHz

Unit

 

 

 

 

 

 

 

 

Maximum Access Time

 

6.5

 

8.0

ns

 

 

 

 

 

 

 

 

Maximum Operating Current

 

225

 

205

mA

 

 

 

 

 

 

 

 

Maximum Standby Current

 

40

 

40

mA

 

 

 

 

 

 

 

 

 

 

Pin Configuration

100-pin TQFP Pinout

A A

CE1

CE

BW

BW

BW

BW CE

V V CLK

GW

 

BWE OE

ADSC

 

ADSP

ADV

A A

 

 

 

 

 

2

D

C

B

A

3

DD SS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BYTE C

BYTE D

NC

DQC

DQC

VDDQ

VSSQ

DQC

DQC DQC DQC

VSSQ VDDQ

DQC DQC

NC

VDD

NC

VSS

DQD

DQD

VDDQ

VSSQ

DQD

DQD DQD DQD

VSSQ

VDDQ

DQD DQD

NC

100

99

98

97

96

95

94

93

92

91

90

89

88

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15CY7C1336H

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

87

86

85

84

83

82

81

80

79

78

77

76

75

74

73

72

71

70

69

68

67

66

65

64

63

62

61

60

59

58

57

56

55

54

53

52

51

44

45

46

47

48

49

50

NC

DQB DQB

VDDQ VSSQ

DQB DQB DQB DQB

VSSQ VDDQ

DQB DQB

VSS

NC

VDD

ZZ

DQA DQA

VDDQ VSSQ

DQA DQA DQA DQA

VSSQ VDDQ

DQA DQA NC

BYTE B

BYTE A

MODE A A A A A A

NC/72M NC/36M

V

V

NC/18M NC/9M A A A A A A

NC/4M

1 0

 

SS

DD

 

 

Document #: 001-00210 Rev. *A

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Contents Functional Description1 FeaturesLogic Block Diagram Cypress Semiconductor Corporation15CY7C1336H Pin ConfigurationSelection Guide 133 MHz 100 MHz UnitPin Definitions Functional Overview Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND Address ZZ Mode Electrical CharacteristicsParameter Description Test Conditions Min Max Unit Cycle Description UsedBWE Truth Table for Read/Write 2Function Ambient Maximum RatingsOperating Range RangeAC Test Loads and Waveforms Capacitance9Thermal Resistance9 Parameter Description Test Conditions Tqfp UnitSwitching Characteristics Over the Operating Range 10 Timing Diagrams Read Cycle Timing16Adsc Write Cycle Timing16CLK ADVAddress Read/Write Timing16, 18Adsp Adsc Burst ReadZZ Mode Timing20 Pin Tqfp 14 x 20 x 1.4 mm Package DiagramOrdering Information REV ECN no Issue Date Orig. Description of ChangeDocument History

CY7C1336H specifications

The Cypress CY7C1336H is a high-performance static random-access memory (SRAM) device that has gained recognition for its outstanding speed and reliability. This component is widely used in various high-performance applications including networking, telecommunications, and industrial control systems, where fast data storage and retrieval are critical.

One of the main features of the CY7C1336H is its high-speed operation, offering access times of as low as 10 nanoseconds. This makes it ideal for applications that require quick response times and efficient processing. The device operates with a supply voltage of 2.5V, which not only helps in reducing power consumption but also enables its use in newer low-voltage systems.

The CY7C1336H boasts a capacity of 1 megabit, organized in a configuration of 128K words by 8 bits. This allows it to store a significant amount of data while maintaining a compact footprint. In addition to its size, the device supports a burst mode, which enhances its efficiency in handling data transfer operations. This feature is particularly useful in applications requiring continuous data streaming, such as video processing or high-speed networking.

The memory technology employed in the CY7C1336H is known for its robustness and durability. Unlike DRAM, SRAM does not require periodic refreshing, which simplifies system design and improves overall performance. The device also features fast output enable and chip enable options, providing greater flexibility in controlling memory access and improving overall system response time.

In terms of packaging, the CY7C1336H is available in various forms including 32-pin SOJ and 44-pin TSOP packages, catering to diverse design requirements. Its compact packaging and low thermal characteristics make it suitable for space-constrained applications.

Another noteworthy characteristic of this SRAM is its inherent data integrity and reliability. With features such as on-chip parity generation and error checking capabilities, the CY7C1336H ensures that the data stored remains accurate and consistent over time.

Overall, the Cypress CY7C1336H delivers a blend of high speed, low power consumption, and reliability, making it an excellent choice for designers looking to implement high-performance memory solutions in their applications. Its combination of lasting performance and advanced features secures its place in both current and future electronic designs.