Cypress CY7C1334H manual Switching Characteristics Over the Operating Range 12

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CY7C1334H

Switching Characteristics Over the Operating Range [12, 13]

 

 

 

 

 

 

 

 

 

 

166 MHz

133 MHz

 

Parameter

 

 

 

 

 

 

 

 

Description

 

 

 

 

Unit

 

 

 

 

 

 

 

 

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

tPOWER

 

VDD (typical) to the First Access[14]

1

 

1

 

ms

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

6.0

 

7.5

 

ns

tCH

 

Clock HIGH

2.5

 

3.0

 

ns

tCL

 

Clock LOW

2.5

 

3.0

 

ns

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

 

Data Output Valid after CLK Rise

 

3.5

 

4.0

ns

tDOH

 

Data Output Hold after CLK Rise

1.5

 

1.5

 

ns

t

 

Clock to Low-Z[15, 16, 17]

0

 

0

 

ns

CLZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

 

Clock to High-Z[15, 16, 17]

 

3.5

 

4.0

ns

CHZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tOEV

 

 

 

LOW to Output Valid

 

3.5

 

4.0

ns

OE

 

 

t

 

 

 

LOW to Output Low-Z[15, 16, 17]

0

 

0

 

ns

OE

 

 

OELZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tOEHZ

 

 

 

HIGH to Output High-Z[15, 16, 17]

 

3.5

 

4.0

ns

OE

 

 

Set-up Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Set-up before CLK Rise

1.5

 

1.5

 

ns

tALS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV/LD

 

Set-up before CLK Rise

1.5

 

1.5

 

ns

tWES

 

 

 

 

 

 

 

 

[A:D] Set-up before CLK Rise

1.5

 

1.5

 

ns

GW,

BW

 

 

tCENS

 

 

 

 

Set-up before CLK Rise

1.5

 

1.5

 

ns

CEN

 

 

tDS

 

Data Input Set-up before CLK Rise

1.5

 

1.5

 

ns

tCES

 

Chip Enable Set-Up before CLK Rise

1.5

 

1.5

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold after CLK Rise

0.5

 

0.5

 

ns

tALH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV/LD

Hold after CLK Rise

0.5

 

0.5

 

ns

tWEH

 

 

 

 

 

 

 

[A:D] Hold after CLK Rise

0.5

 

0.5

 

ns

GW,

BW

 

 

tCENH

 

 

 

 

Hold after CLK Rise

0.5

 

0.5

 

ns

CEN

 

 

tDH

 

Data Input Hold after CLK Rise

0.5

 

0.5

 

ns

tCEH

 

Chip Enable Hold after CLK Rise

0.5

 

0.5

 

ns

Notes:

12.Test conditions shown in (a), (b) and (c) of AC Test Loads.

13.Timing reference level is 1.5V when VDDQ = 3.3V and 1.25V when VDDQ = 2.5V.

14.This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a Read or Write operation can be initiated.

15.tCHZ, tCLZ, tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

16.At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve Tri-State prior to Low-Z under the same system conditions

17.This parameter is sampled and not 100% tested.

Document #: 38-05678 Rev. *B

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Contents Features Logic Block DiagramCypress Semiconductor Corporation Maximum Access Time tCO Maximum Operating Current IDD Pin ConfigurationSelection Guide 166 MHz 133 MHz UnitPin Definitions Functional Overview First Second Third Fourth Address A1, A0 Interleaved Burst Address Table Mode = Floating or VDDFirst Second Third Fourth Address A1, A0 Operation Used ADV/LD CEN CLK Write Cycle Description2 ZZ Mode Electrical Characteristics Function BW D BW C BW B BW aMaximum Rating Operating RangeAmbient Range Capacitance11 Thermal Resistance11AC Test Loads and Waveforms Switching Characteristics Over the Operating Range 12 Read/Write Timing18, 19 Switching WaveformsAddress A1 A2 DON’T CareZZ Mode Timing22 NOP, STALL, and Deselect Cycles18, 19DA4 Package Diagram Ordering InformationPin Tqfp 14 x 20 x 1.4 mm Issue Date Orig. Description of Change Document HistoryREV ECN no