Cypress CY14B108K AC Switching Characteristics, Switching Waveforms, Parameters Sram Read Cycle

Page 18

 

 

 

 

PRELIMINARY

 

CY14B108K, CY14B108M

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC Switching Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameters

Description

20 ns

25 ns

45 ns

Unit

Cypress

Alt

Min

Max

Min

Max

Min

Max

Parameters

Parameters

 

 

 

 

 

 

 

 

 

 

SRAM Read Cycle

 

 

 

 

 

 

 

 

tACE

tACS

Chip Enable Access Time

 

20

 

25

 

45

ns

tRC [15]

tRC

Read Cycle Time

20

 

25

 

45

 

ns

tAA [16]

tAA

Address Access Time

 

20

 

25

 

45

ns

tDOE

tOE

Output Enable to Data Valid

 

10

 

12

 

20

ns

tOHA[16]

tOH

Output Hold After Address Change

3

 

3

 

3

 

ns

tLZCE [13, 17]

tLZ

Chip Enable to Output Active

3

 

3

 

3

 

ns

tHZCE [13, 17]

tHZ

Chip Disable to Output Inactive

 

8

 

10

 

15

ns

tLZOE [13, 17]

tOLZ

Output Enable to Output Active

0

 

0

 

0

 

ns

tHZOE [13, 17]

tOHZ

Output Disable to Output Inactive

 

8

 

10

 

15

ns

tPU [13]

tPA

Chip Enable to Power Active

0

 

0

 

0

 

ns

tPD [13]

tPS

Chip Disable to Power Standby

 

20

 

25

 

45

ns

tDBE

-

 

 

Byte Enable to Data Valid

 

10

 

12

 

20

ns

tLZBE[13]

-

 

 

Byte Enable to Output Active

0

 

0

 

0

 

ns

tHZBE[13]

-

 

 

Byte Disable to Output Inactive

 

8

 

10

 

15

ns

SRAM Write Cycle

 

 

 

 

 

 

 

 

tWC

tWC

Write Cycle Time

20

 

25

 

45

 

ns

tPWE

tWP

Write Pulse Width

15

 

20

 

30

 

ns

tSCE

tCW

Chip Enable To End of Write

15

 

20

 

30

 

ns

tSD

tDW

Data Setup to End of Write

8

 

10

 

15

 

ns

tHD

tDH

Data Hold After End of Write

0

 

0

 

0

 

ns

tAW

tAW

Address Setup to End of Write

15

 

20

 

30

 

ns

tSA

tAS

Address Setup to Start of Write

0

 

0

 

0

 

ns

tHA

tWR

Address Hold After End of Write

0

 

0

 

0

 

ns

tHZWE [13, 17,18]

tWZ

Write Enable to Output Disable

 

8

 

10

 

15

ns

tLZWE [13, 17]

tOW

Output Active after End of Write

3

 

3

 

3

 

ns

tBW

-

 

 

Byte Enable to End of Write

15

 

20

 

30

 

ns

Switching Waveforms

Figure 7. SRAM Read Cycle 1: Address Controlled[15, 16, 19]

 

tRC

Address

Address Valid

 

tAA

Data Output

Previous Data Valid

 

tOHA

Notes

15.WE must be HIGH during SRAM read cycles.

16.Device is continuously selected with CE, OE and BHE / BLE LOW.

17.Measured ±200 mV from steady state output voltage.

18.If WE is LOW when CE goes LOW, the outputs remain in the high impedance state.

19.HSB must remain HIGH during Read and Write cycles.

Output Data Valid

Document #: 001-47378 Rev. **

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Contents Functional Description FeaturesLogic Block Diagram1, 2 Cypress Semiconductor CorporationPinouts Sram Write Device OperationSram Read AutoStore OperationSoftware Recall Hardware Recall Power UpHardware Store HSB Operation Software StorePreventing AutoStore Mode SelectionA15 A05 Mode Power StoreData Protection Best Practices Noise ConsiderationsReal Time Clock Operation Alarm Watchdog TimerCalibrating the Clock Interrupts Power MonitorInterrupt Register Flags RegisterPFE Power Fail Enable WDF Watchdog Timer FlagPF Power Fail Flag AF Alarm FlagOscen WDSWDF Oscf 0xFFFF9 0x7FFF9 Time Keeping Seconds For the register is 0 toWrite only. Reading it always returns a 0xFFFF5 0x7FFF5 Alarm DayTime-base 0xFFFF6 0x7FFF6 Interrupt Status/ControlWatchdog 0xFFFF2 0x7FFF2 Alarm SecondsCenturies 0xFFFF0 0x7FFF0 Flags This condition and write 0 to clear this flagMaximum Ratings DC Electrical CharacteristicsRange Ambient Temperature Operating RangeThermal Resistance Data Retention and EnduranceCapacitance AC Test ConditionsRTC Battery Pin Voltage RTC Backup CurrentHot Temperature 85 oC RTC Capacitor Pin Voltage TOCS RTC Oscillator Time to StartParameters Sram Read Cycle AC Switching CharacteristicsSwitching Waveforms Sram Write CycleAddress Address Valid Data Output High Impedance Output Data ValidStandby Active Data Input Input Data ValidNot applicable for RTC register writes Data Input Data OutputInput Data Valid High Impedance Data Input Input Data Valid High Impedance Data OutputAutoStore/Power Up Recall Parameters Description 20 ns 25 ns 45 ns Unit Min MaxSoftware Controlled Store and Recall Cycle Description 20 ns 25 ns 45 ns Unit Min To Output Active Time when write latch not setHardware Store Cycle Hardware Store Pulse WidthInputs and Outputs Mode Power For x8 ConfigurationFor x16 Configuration Truth Table For Sram OperationsPart Numbering Nomenclature CY14 B 108 K ZS P 20 X C T ZS TsopNvsram Ordering Information Package Diagrams Pin Tsop II51-85160 New Data Sheet Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions Document History