Cypress CY14E256L manual Features, Functional Description

CY14E256L

256 Kbit (32K x 8) nvSRAM

Features

■25 ns, 35 ns, and 45 ns access times

■Pin compatible with STK14C88

■Hands off automatic STORE on power down with external 68 µF capacitor

■STORE to QuantumTrap™ nonvolatile elements is initiated by software, hardware, or AutoStore™ on power down

■RECALL to SRAM initiated by software or power up

■Unlimited READ, WRITE, and RECALL cycles

■1,000,000 STORE cycles to QuantumTrap

■100 year data retention to QuantumTrap

■Single 5V+10% operation

■Commercial and industrial temperature

■32-pin SOIC and CDIP (300 mil) packages

■RoHS compliance

Functional Description

The Cypress CY14E256L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while independent, nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control. A hardware STORE is initiated with the HSB pin.

Logic Block Diagram					VCC	VCAP
			Quantum Trap
			512 X 512		POWER
A5
			STORE		CONTROL
A6	DECODER
A7			RECALL
A8					STORE/
A9		STATIC RAM			RECALL		HSB
			ARRAY
A11					CONTROL
	ROW		512 X 512
A12
A13
A14						SOFTWARE		A13 - A0
						DETECT
DQ0		COLUMN I/O
DQ1	BUFFERS	COLUMN DEC
DQ2
DQ3
DQ4
	INPUT
DQ5		A0 A1 A2 A3 A4 A10
DQ6
DQ7
								OE
								CE
								WE
Cypress Semiconductor Corporation		•	198 Champion Court	•	San Jose, CA 95134-1709		•	408-943-2600
Document Number: 001-06968 Rev. *F						Revised January 30, 2009

[+] Feedback