Cypress CY14E256L manual Document History

Page 17

CY14E256L

Document History Page

Document Title: CY14E256L 256 Kbit (32K x 8) nvSRAM

Document Number: 001-06968

Rev.

ECN No.

Submission

Orig. of

Description of Change

Date

Change

 

 

 

 

 

 

 

 

**

427789

See ECN

TUP

New data sheet

 

 

 

 

 

*A

437321

See ECN

TUP

Show data sheet on external Web

 

 

 

 

 

*B

472053

See ECN

TUP

Updated Part Numbering Nomenclature and Ordering Information

 

 

 

 

 

*C

503290

See ECN

PCI

Changed from “Advance” to “Preliminary”

 

 

 

 

Changed the term “Unlimited” to “Infinite”

 

 

 

 

Changed ICC3 value from 10mA to 15mA

 

 

 

 

Removed Industrial Grade mention

 

 

 

 

Removed 35 ns speed bin

 

 

 

 

Removed ICC1 values from the DC table for 35 ns Industrial Grade

 

 

 

 

Corrected VIL min specification from (VCC - 0.5) to (VSS - 0.5)

 

 

 

 

Removed all references pertaining to OE controlled Software STORE and

 

 

 

 

RECALL operation

 

 

 

 

Changed the address locations of the software STORE/RECALL com-

 

 

 

 

mand

 

 

 

 

Updated Part Nomenclature Table and Ordering Information Table

*D

1349963

See ECN

UHA/SFV

Changed from “Preliminary” to “Final.” Updated AC Test Conditions

 

 

 

 

Updated Ordering Information Table

*E

2427986

See ECN

GVCH

Move to external web

 

 

 

 

 

*F

2606744

02/19/09

GVCH/PYRS

Updated Feature Section

 

 

 

 

Added 35 ns access speed specs

 

 

 

 

Added CDIP package

 

 

 

 

Removed HSB ganging feature

 

 

 

 

Added footnote 5

 

 

 

 

Updates all the notes

 

 

 

 

Added Best practices

 

 

 

 

Added Industrial specs

 

 

 

 

Changed Icc3 from 15 mA to 10 mA

 

 

 

 

Added ISB1 spec

 

 

 

 

Added parameter VBL

 

 

 

 

Changed VIH test conditions from -2 and 4 to -4 and 8mA

 

 

 

 

Added footnote 6 and 7

 

 

 

 

Added tVSBL and VRESET parameter to Autostore or Power-up Recall table

 

 

 

 

Added Thermal resistance values

 

 

 

 

Changed parameter tAS to tSA

 

 

 

 

Renamed tGLAX to tHACE

 

 

 

 

Renamed tRESTORE to tDHSB

 

 

 

 

Updated Figure 13

Document Number: 001-06968 Rev. *F

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Contents Functional Description FeaturesPin Definitions Pin ConfigurationsDevice Operation AutoStore Inhibit modeSram Read Sram WriteHardware Store HSB Operation Hardware Recall Power UpSoftware Store Software RecallData Protection Low Average Active PowerNoise Considerations Hardware ProtectBest Practices Hardware Mode SelectionA13-A0 Mode Power Range Ambient Temperature DC Electrical CharacteristicsMaximum Ratings Operating RangeCapacitance Data Retention and EnduranceThermal Resistance AC Test ConditionsSwitching Waveforms AC Switching CharacteristicsMin Max ParameterData Setup to End of Write Chip Enable To End of WriteAddress Setup to End of Write Address Setup to Start of WriteParameter Alt Description CY14E256L Unit Min Max AutoStore or Power Up RecallAlt Description 25 ns 35 ns 45 ns Unit Min Max Software Controlled STORE/RECALL CycleHardware Store High to Inhibit Off 700 Hardware Store CycleHardware Store Pulse Width Hardware Store Low to Store Busy 300Ordering Information Pin 300 Mil Soic Package DiagramPin 300 Mil Cdip Document History USB Sales, Solutions, and Legal Information