Samsung MZMTD256HAGM00000 Dimm Sodimm, DDR3 Sdram 1.5V VDD DDR Sdram 2.5V VDD DDR2 Sdram 1.8V VDD

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Module DRAM Ordering Information

1

2

3

4

5

6

7

8

9

10

11

12

13

M

X

XX

T

XX

X

X

X

X

X

X

XX

X

 

 

 

 

 

 

 

 

 

 

 

 

 

SAMSUNG Memory

 

 

 

 

 

 

 

 

 

 

 

AMB Vendor

DIMM

 

 

 

 

 

 

 

 

 

 

 

Speed

Data bits

 

 

 

 

 

 

 

 

 

 

 

Temp & Power

DRAM Component Type

 

 

 

 

 

 

 

 

 

 

 

PCB Revision

Depth

 

 

 

 

 

 

 

 

 

 

 

Package

Number of Banks

 

 

 

 

 

 

 

 

 

 

 

Generation

Bit Organization

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.Memory Module: M

2.DIMM Type

3:DIMM

4:SODIMM

3.Data bits

12:x72 184pin Low Profile Registered DIMM

63:x63 PC100/PC133 μSODIMM with SPD for 144pin

64:x64 PC100/PC133 SODIMM with SPD for 144pin (Intel/JEDEC)

66:x64 Unbuffered DIMM with SPD for 144pin/168pin (Intel/JEDEC)

68:x64 184pin Unbuffered DIMM

70:x64 200pin Unbuffered SODIMM

71:x64 204pin Unbuffered SODIMM

74:x72/ECC Unbuffered DIMM with SPD for 168pin (Intel/JEDEC)

77:x72/ECC PLL + Register DIMM with SPD for 168pin (Intel PC100)

78:x64 240pin Unbuffered DIMM

81:x72 184pin ECC unbuffered DIMM

83:x72 184pin Registered DIMM

90:x72/ECC PLL + Register DIMM

91:x72 240pin ECC unbuffered DIMM

92:x72 240pin VLP Registered DIMM

93:x72 240pin Registered DIMM

95:x72 240pin Fully Buffered DIMM with SPD for 168pin (JEDEC PC133)

4.DRAM Component Type

B:DDR3 SDRAM (1.5V VDD)

L:DDR SDRAM (2.5V VDD)

S:SDRAM

T:DDR2 SDRAM (1.8V VDD)

5.Depth

09:8M (for 128Mb/512Mb)

17:16M (for 128Mb/512Mb)

16:16M

28:128M

29:128M (for 128Mb/512Mb)

32:32M

33:32M (for 128Mb/512Mb)

51:512M

52:512M (for 512Mb/2Gb)

56:256M

57:256M (for 512Mb/2Gb)

59:256M (for 128Mb/512Mb)

64:64M

65:64M (for 128Mb/512Mb) 1G: 1G

1K: 1G (for 2Gb)

6.# of Banks in Comp. & Interface

1:4K/64mxRef., 4Banks & SSTL-2

2 : 8K/64ms Ref., 4Banks & SSTL-2

2:4K/64ms Ref., 4Banks & LVTTL (SDR Only)

5:8K/64ms Ref., 4Banks & LVTTL (SDR Only)

5:4Banks & SSTL-1.8V

6:8Banks & SSTL-1.8V

7.Bit Organization

0:x 4

3:x 8

4:x16

6:x 4 Stack (JEDEC Standard)

7:x 8 Stack (JEDEC Standard)

8:x 4 Stack

9:x 8 Stack

8.Generation

A:2nd Gen.

B:3rd Gen.

C:4th Gen.

D:5th Gen.

E:6th Gen.

F:7th Gen.

G:8th Gen.

M:1st Gen.

Q:17th Gen.

9.Package

E:FBGA QDP (Lead-free & Halogen-free)

G:FBGA

H:FBGA (Lead-free & Halogen-free)

J:FBGA DDP (Lead-free)

M:FBGA DDP (Lead-free & Halogen-free)

N:sTSOP

Q:FBGA QDP (Lead-free)

T:TSOP II (400mil)

U:TSOP II (Lead-Free)

V:sTSOP II (Lead-Free)

Z:FBGA (Lead-free)

10.PCB Revision

0:Mother PCB

1:1st Rev

2:2nd Rev.

3:3rd Rev.

4:4th Rev.

A:Parity DIMM

S:Reduced PCB

U:Low Profile DIMM

11.Temp & Power

C:Commercial Temp. (0°C ~ 95°C) & Normal

Power

L:Commercial Temp. (0°C ~ 95°C) & Low Power

12.Speed

CC: (200MHz @ CL=3, tRCD=3, tRP=3)

D5: (266MHz @ CL=4, tRCD=4, tRP=4)

E6: (333MHz @ CL=5, tRCD=5, tRP=5)

F7: (400MHz @ CL=6, tRCD=6, tRP=6)

E7: (400MHz @ CL=5, tRCD=5, tRP=5)

F8: (533MHz @ CL=7, tRCD=7, tRP=7)

G8: (533MHz @ CL=8, tRCD=8, tRP=8)

H9: (667MHz @ CL=9, tRCD=9, tRP=9)

K0: (800MHz @ CL=10, tRCD=10, tRP=10)

7A: (133MHz CL=3/PC100 CL2)

13. AMB Vendor for FBDIMM

0, 5: Intel

1, 6, 8: IDT

9: Montage

Note: All Lead-free and Halogen-free products are in compliance with RoHS

12DRAM Ordering Information

2H 2013

samsung.com/dram

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Contents Productselectionguide Samsung Semiconductor, Inc Dram DDR4 Sdram Registered Modules DDR4 Sdram Load Reduced ModulesDDR3 Sdram Registered Modules M386A4GDM0-CPBDDR3 Sdram VLP Registered Modules DDR3 SdramDDR3 Sdram Unbuffered Modules 1GBDDR3 Sdram Sodimm Modules DDR3 Sdram ECC Sodimm Modules2GB 4GBDDR3 Sdram Components DDR2 Sdram ComponentsFbga DDR Sdram Components Mobile Dram ComponentsGraphics Dram Components Component Dram Ordering Information XDR Dram Boclf P BOC 25 2.5ns 400MHz2A 2.86ns 350MHz 07 0.71ns 1400MHz Dimm Sodimm DDR3 Sdram 1.5V VDD DDR Sdram 2.5V VDD DDR2 Sdram 1.8V VDDX16 4 Stack Jedec Standard 8 Stack Jedec Standard Intel 8 IDT Montage Dram Ordering InformationK9WAG08U1E-SCB0 TSOP1-LF/HF K9WAG08U1E-SIB0TSOP1 LF/HF FBGA-LF/HF2GB MMAUR02G3ACA-QNJ00 CL4 4GB MMBTR04G3CCA-QNJ00 8GB MMCTR08G3ACH-QNJ00 CL4MMCTR16GUACJ-SAC00 MMCTR32GUACJ-SAC00MMC Iops 4GBKLM4G1YEMD-C031 KLM8G1WEMB-B031EOL MZ7TD120HAFV-000DA EOLMZ7TD240HAFV-000DA EOL MZ7TD480HAGM-000DA EOLMLC QDP SLC DDP MLC DDP MLC DSP SLC DSP SLC Single S/BCOB Chip BIZ D 63-TBGAEMCP = eMMC + LPDDR1 or LPDDR2 or LPDDR3 Multi-Chip Packages4Gb*2 x32, 1ch, 2CS 3V/1.8V 1.8V/1.2V 221FBGA 11.5x13mm 4Gb 3V/1.8V 1.8V/1.2V 162FBGA 11.5x13mm 4Gb*2 x32, 1ch, 2CS4Gb*2 x32, 1ch, 2CS 3V/1.8V 1.8V/1.2V 162FBGA 11.5x13mm 512Mb 3V/1.8V 153FBGA 11.5x13mmSamsung Solid State Drives SSDsSata Designed for TV signals DidExclusive Years Narrow Hours + 450 to 1500 nits Heavy High-value commercial rangeLED FHDCcfl NEWHrgb PPIPLS Wxga PLS WsvgaSlsi LCDOregon Slsi WashingtonUtah KansasIowa ONTARIO-CANADA SlsiAlabama Slsi GeorgiaNorth Carolina FloridaDisplays

MZMTD256HAGM00000 specifications

The Samsung MZMTD256HAGM00000 is a high-performance solid-state drive (SSD) designed to meet the demands of modern computing. As a member of Samsung's renowned line of M.2 NVMe SSDs, it offers a combination of speed, reliability, and efficiency, making it an excellent choice for both consumer and enterprise applications.

One of the key features of the MZMTD256HAGM00000 is its use of the NVMe (Non-Volatile Memory Express) interface, which drastically improves data transfer rates compared to traditional SATA interfaces. With NVMe, the drive can communicate directly with the motherboard via the PCIe (Peripheral Component Interconnect Express) bus, allowing it to leverage multiple lanes for data transfer. This results in significantly lower latency and higher throughput, which is crucial for tasks that require quick access to large files, such as video editing, gaming, and data analysis.

The MZMTD256HAGM00000 comes with a storage capacity of 256 GB, providing ample space for a wide array of applications and files. The use of Samsung's advanced V-NAND technology enhances the drive’s performance and endurance. V-NAND architecture allows for more cells to be stacked vertically, which not only optimizes performance but also increases the storage density, leading to improved power efficiency.

In terms of performance, the Samsung MZMTD256HAGM00000 delivers impressive read and write speeds, making it an ideal choice for users seeking fast boot times and quick file transfers. Sequential read speeds can reach up to 500 MB/s, while write speeds also achieve commendable performance, catering to demanding workloads and ensuring smooth multitasking.

The drive also features Samsung’s Dynamic Thermal Guard technology, which helps maintain optimal operating temperatures. This feature protects the SSD from overheating during intense workloads, ensuring reliability and longevity of the drive. Additionally, the MZMTD256HAGM00000 is built with a robust error correction code (ECC) and supports TRIM technology, enhancing overall data integrity and performance.

Furthermore, the compact M.2 form factor of the MZMTD256HAGM00000 allows for easy installation in various computing devices, including laptops, desktops, and gaming rigs. Its lightweight design contributes to the overall efficiency and portability of the system.

In summary, the Samsung MZMTD256HAGM00000 is a powerful SSD that combines advanced technology with high storage capacity and speed. Its NVMe interface, reliability, and thermal management features make it an exceptional option for anyone looking to enhance the performance of their computing setup. Whether for gaming, content creation, or general use, the MZMTD256HAGM00000 stands out as a reliable storage solution.
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