Samsung MZMTD256HAGM00000 Dimm Sodimm, DDR3 Sdram 1.5V VDD DDR Sdram 2.5V VDD DDR2 Sdram 1.8V VDD

Module DRAM Ordering Information

1

2

3

4

5

6

7

8

9

10

11

12

13

M

X

XX

T

XX

X

X

X

X

X

X

XX

X

SAMSUNG Memory

AMB Vendor

DIMM

Speed

Data bits

Temp & Power

DRAM Component Type

PCB Revision

Depth

Package

Number of Banks

Generation

Bit Organization

1.Memory Module: M

2.DIMM Type

3:DIMM

4:SODIMM

3.Data bits

12:x72 184pin Low Profile Registered DIMM

63:x63 PC100/PC133 μSODIMM with SPD for 144pin

64:x64 PC100/PC133 SODIMM with SPD for 144pin (Intel/JEDEC)

66:x64 Unbuffered DIMM with SPD for 144pin/168pin (Intel/JEDEC)

68:x64 184pin Unbuffered DIMM

70:x64 200pin Unbuffered SODIMM

71:x64 204pin Unbuffered SODIMM

74:x72/ECC Unbuffered DIMM with SPD for 168pin (Intel/JEDEC)

77:x72/ECC PLL + Register DIMM with SPD for 168pin (Intel PC100)

78:x64 240pin Unbuffered DIMM

81:x72 184pin ECC unbuffered DIMM

83:x72 184pin Registered DIMM

90:x72/ECC PLL + Register DIMM

91:x72 240pin ECC unbuffered DIMM

92:x72 240pin VLP Registered DIMM

93:x72 240pin Registered DIMM

95:x72 240pin Fully Buffered DIMM with SPD for 168pin (JEDEC PC133)

4.DRAM Component Type

B:DDR3 SDRAM (1.5V VDD)

L:DDR SDRAM (2.5V VDD)

S:SDRAM

T:DDR2 SDRAM (1.8V VDD)

5.Depth

09:8M (for 128Mb/512Mb)

17:16M (for 128Mb/512Mb)

16:16M

28:128M

29:128M (for 128Mb/512Mb)

32:32M

33:32M (for 128Mb/512Mb)

51:512M

52:512M (for 512Mb/2Gb)

56:256M

57:256M (for 512Mb/2Gb)

59:256M (for 128Mb/512Mb)

64:64M

65:64M (for 128Mb/512Mb) 1G: 1G

1K: 1G (for 2Gb)

6.# of Banks in Comp. & Interface

1:4K/64mxRef., 4Banks & SSTL-2

2 : 8K/64ms Ref., 4Banks & SSTL-2

2:4K/64ms Ref., 4Banks & LVTTL (SDR Only)

5:8K/64ms Ref., 4Banks & LVTTL (SDR Only)

5:4Banks & SSTL-1.8V

6:8Banks & SSTL-1.8V

7.Bit Organization

0:x 4

3:x 8

4:x16

6:x 4 Stack (JEDEC Standard)

7:x 8 Stack (JEDEC Standard)

8:x 4 Stack

9:x 8 Stack

8.Generation

A:2nd Gen.

B:3rd Gen.

C:4th Gen.

D:5th Gen.

E:6th Gen.

F:7th Gen.

G:8th Gen.

M:1st Gen.

Q:17th Gen.

9.Package

E:FBGA QDP (Lead-free & Halogen-free)

G:FBGA

H:FBGA (Lead-free & Halogen-free)

J:FBGA DDP (Lead-free)

M:FBGA DDP (Lead-free & Halogen-free)

N:sTSOP

Q:FBGA QDP (Lead-free)

T:TSOP II (400mil)

U:TSOP II (Lead-Free)

V:sTSOP II (Lead-Free)

Z:FBGA (Lead-free)

10.PCB Revision

0:Mother PCB

1:1st Rev

2:2nd Rev.

3:3rd Rev.

4:4th Rev.

A:Parity DIMM

S:Reduced PCB

U:Low Profile DIMM

11.Temp & Power

C:Commercial Temp. (0°C ~ 95°C) & Normal

Power

L:Commercial Temp. (0°C ~ 95°C) & Low Power

12.Speed

CC: (200MHz @ CL=3, tRCD=3, tRP=3)

D5: (266MHz @ CL=4, tRCD=4, tRP=4)

E6: (333MHz @ CL=5, tRCD=5, tRP=5)

F7: (400MHz @ CL=6, tRCD=6, tRP=6)

E7: (400MHz @ CL=5, tRCD=5, tRP=5)

F8: (533MHz @ CL=7, tRCD=7, tRP=7)

G8: (533MHz @ CL=8, tRCD=8, tRP=8)

H9: (667MHz @ CL=9, tRCD=9, tRP=9)

K0: (800MHz @ CL=10, tRCD=10, tRP=10)

7A: (133MHz CL=3/PC100 CL2)

13. AMB Vendor for FBDIMM

0, 5: Intel

1, 6, 8: IDT

9: Montage

Note: All Lead-free and Halogen-free products are in compliance with RoHS

12DRAM Ordering Information

2H 2013

samsung.com/dram