Samsung MZMTD256HAGM00000 manual XDR Dram Boclf P BOC, 25 2.5ns 400MHz

Page 11

COMPONENT DRAM ORDERING INFORMATION

1

2

3

4

5

6

7

8

9

10

11

K

4

T

XX

XX

X

X

X

X

X

XX

 

 

 

 

 

 

 

 

 

 

 

SAMSUNG Memory

 

 

 

 

 

 

 

 

 

Speed

DRAM

 

 

 

 

 

 

 

 

 

Temp & Power

 

 

 

 

 

 

 

 

 

 

DRAM Type

 

 

 

 

 

 

 

 

 

Package Type

 

 

 

 

 

 

 

 

 

Generation

Density

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Interface (VDD, VDDQ)

 

 

 

 

 

 

 

 

 

 

Bit Organization

 

 

 

 

 

 

 

 

 

Number of Internal Banks

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DRAM

XDR DRAM

J: BOC(LF) P: BOC

Mobile DRAM

Leaded/Lead Free

G/A: 52balls FBGA Mono

R/B: 54balls FBGA Mono

X/Z: 54balls BOC Mono

J/V: 60(72)balls FBGA Mono 0.5pitch

L /F: 60balls FBGA Mono 0.8pitch

S/D: 90balls FBGA

Monolithic (11mm x 13mm)

F/H: Smaller 90balls FBGA Mono

Y/P: 54balls CSP DDP

M/E: 90balls FBGA DDP

10.Temp & Power - COMMON (Temp, Power)

C:Commercial, Normal (0’C – 95’C) & Normal Power

C:(Mobile Only) Commercial (-25 ~ 70’C), Normal Power

J: Commercial, Medium

L:Commercial, Low (0’C – 95’C) & Low Power

L:(Mobile Only) Commercial, Low, i-TCSR

F:Commercial, Low, i-TCSR & PASR & DS

E:Extended (-25~85’C), Normal

N:Extended, Low, i-TCSR

G:Extended, Low, i-TCSR & PASR & DS

I:Industrial, Normal (-40’C – 85’C) & Normal Power

P:Industrial, Low (-40’C – 85’C) & Low Power

H:Industrial, Low, i-TCSR & PASR & DS

11.Speed (Wafer/Chip Biz/BGD: 00)

DDR SDRAM

CC:DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) B3: DDR333 (166MHz @ CL=2.5, tRCD=3,

tRP=3) *1

A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)

B0: DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)

Note 1: "B3" has compatibility with "A2" and "B0"

DDR2 SDRAM

CC:DDR2-400 (200MHz @ CL=3, tRCD=3, tRP=3)

D5: DDR2-533 (266MHz @ CL=4, tRCD=4,

tRP=4)

E6: DDR2-667 (333MHz @ CL=5, tRCD=5,

tRP=5)

F7: DDR2-800 (400MHz @ CL=6, tRCD=6,

tRP=6)

E7: DDR2-800 (400MHz @ CL=5, tRCD=5,

tRP=5)

DDR3 SDRAM

F7: DDR3-800 (400MHz @ CL=6, tRCD=6,

tRP=6)

F8: DDR3-1066 (533MHz @ CL=7, tRCD=7,

tRP=7)

G8: DDR3-1066 (533MHz @ CL=8, tRCD=8,

tRP=8)

H9: DDR3-1333 (667MHz @ CL=9, tRCD=9,

tRP=9)

K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,

tRP=11)

MA: DDR3-1866 (933MHz @ CL=13, tRCD=13,

tRP=13)

NB: DDR3-2133 (1067MHz @ CL=14, tRCD=14,

tRP=14)

Graphics Memory

18:1.8ns (550MHz)

04:0.4ns (2500MHz)

20:2.0ns (500MHz)

05:0.5ns (2000MHz)

22:2.2ns (450MHz) 5C: 0.56ns (1800MHz)

25:2.5ns (400MHz)

06:0.62ns (1600MHz) 2C: 2.66ns (375MHz) 6A: 0.66ns (1500MHz)

2A: 2.86ns (350MHz)

07:0.71ns (1400MHz)

33:3.3ns (300MHz) 7A: 0.77ns (1300MHz)

36:3.6ns (275MHz)

08:0.8ns (1200MHz)

40:4.0ns (250MHz)

09:0.9ns (1100MHz)

45:4.5ns (222MHz) 1 : 1.0ns (1000MHz) 50/5A: 5.0ns (200MHz) 1 : 1.1ns (900MHz)

55:5.5ns (183MHz)

12:1.25ns (800MHz)

60:6.0ns (166MHz)

14:1.4ns (700MHz)

16:1.6ns (600MHz)

SDRAM (Default CL=3)

50:5.0ns (200MHz CL=3)

60:6.0ns (166MHz CL=3)

67:6.7ns

75:7.5ns PC133 (133MHz CL=3)

XDR DRAM

A2: 2.4Gbps, 36ns, 16Cycles

B3: 3.2Gbps, 35ns, 20Cycles

C3: 3.2Gbps, 35ns, 24Cycles

C4: 4.0Gbps, 28ns, 24Cycles

DS: Daisychain Sample

Mobile-SDRAM

60:166MHz, CL 3

75:133MHz, CL 3

80:125MHz, CL 3 1H: 105MHz, CL 2 1L: 105MHz, CL 3

15:66MHz, CL 2 & 3

Mobile-DDR

C3: 133MHz, CL 3

C2: 100MHz, CL 3

C0: 66MHz, CL 3

Note: All Lead-free and Halogen-free products are in compliance with RoHS

samsung.com/dram

2H 2013

DRAM Ordering Information

11

 

 

Image 11
Contents Productselectionguide Samsung Semiconductor, Inc Dram M386A4GDM0-CPB DDR4 Sdram Registered ModulesDDR4 Sdram Load Reduced Modules DDR3 Sdram Registered ModulesDDR3 Sdram DDR3 Sdram VLP Registered Modules1GB DDR3 Sdram Unbuffered Modules4GB DDR3 Sdram Sodimm ModulesDDR3 Sdram ECC Sodimm Modules 2GBFbga DDR3 Sdram ComponentsDDR2 Sdram Components Graphics Dram Components DDR Sdram ComponentsMobile Dram Components Component Dram Ordering Information 2A 2.86ns 350MHz 07 0.71ns 1400MHz XDR Dram Boclf P BOC25 2.5ns 400MHz Intel 8 IDT Montage Dram Ordering Information Dimm SodimmDDR3 Sdram 1.5V VDD DDR Sdram 2.5V VDD DDR2 Sdram 1.8V VDD X16 4 Stack Jedec Standard 8 Stack Jedec StandardFBGA-LF/HF K9WAG08U1E-SCB0 TSOP1-LF/HFK9WAG08U1E-SIB0 TSOP1 LF/HFMMCTR32GUACJ-SAC00 2GB MMAUR02G3ACA-QNJ00 CL4 4GB MMBTR04G3CCA-QNJ008GB MMCTR08G3ACH-QNJ00 CL4 MMCTR16GUACJ-SAC00KLM8G1WEMB-B031 MMCIops 4GB KLM4G1YEMD-C031MZ7TD480HAGM-000DA EOL EOLMZ7TD120HAFV-000DA EOL MZ7TD240HAFV-000DA EOLChip BIZ D 63-TBGA MLC QDP SLC DDP MLC DDP MLC DSP SLC DSPSLC Single S/B COBMulti-Chip Packages EMCP = eMMC + LPDDR1 or LPDDR2 or LPDDR3512Mb 3V/1.8V 153FBGA 11.5x13mm 4Gb*2 x32, 1ch, 2CS 3V/1.8V 1.8V/1.2V 221FBGA 11.5x13mm4Gb 3V/1.8V 1.8V/1.2V 162FBGA 11.5x13mm 4Gb*2 x32, 1ch, 2CS 4Gb*2 x32, 1ch, 2CS 3V/1.8V 1.8V/1.2V 162FBGA 11.5x13mmSSDs Samsung Solid State DrivesSata High-value commercial range Designed for TV signalsDid Exclusive Years Narrow Hours + 450 to 1500 nits HeavyNEW LEDFHD CcflPLS Wsvga HrgbPPI PLS WxgaWashington SlsiLCD Oregon SlsiONTARIO-CANADA Slsi UtahKansas IowaFlorida Alabama SlsiGeorgia North CarolinaDisplays

MZMTD256HAGM00000 specifications

The Samsung MZMTD256HAGM00000 is a high-performance solid-state drive (SSD) designed to meet the demands of modern computing. As a member of Samsung's renowned line of M.2 NVMe SSDs, it offers a combination of speed, reliability, and efficiency, making it an excellent choice for both consumer and enterprise applications.

One of the key features of the MZMTD256HAGM00000 is its use of the NVMe (Non-Volatile Memory Express) interface, which drastically improves data transfer rates compared to traditional SATA interfaces. With NVMe, the drive can communicate directly with the motherboard via the PCIe (Peripheral Component Interconnect Express) bus, allowing it to leverage multiple lanes for data transfer. This results in significantly lower latency and higher throughput, which is crucial for tasks that require quick access to large files, such as video editing, gaming, and data analysis.

The MZMTD256HAGM00000 comes with a storage capacity of 256 GB, providing ample space for a wide array of applications and files. The use of Samsung's advanced V-NAND technology enhances the drive’s performance and endurance. V-NAND architecture allows for more cells to be stacked vertically, which not only optimizes performance but also increases the storage density, leading to improved power efficiency.

In terms of performance, the Samsung MZMTD256HAGM00000 delivers impressive read and write speeds, making it an ideal choice for users seeking fast boot times and quick file transfers. Sequential read speeds can reach up to 500 MB/s, while write speeds also achieve commendable performance, catering to demanding workloads and ensuring smooth multitasking.

The drive also features Samsung’s Dynamic Thermal Guard technology, which helps maintain optimal operating temperatures. This feature protects the SSD from overheating during intense workloads, ensuring reliability and longevity of the drive. Additionally, the MZMTD256HAGM00000 is built with a robust error correction code (ECC) and supports TRIM technology, enhancing overall data integrity and performance.

Furthermore, the compact M.2 form factor of the MZMTD256HAGM00000 allows for easy installation in various computing devices, including laptops, desktops, and gaming rigs. Its lightweight design contributes to the overall efficiency and portability of the system.

In summary, the Samsung MZMTD256HAGM00000 is a powerful SSD that combines advanced technology with high storage capacity and speed. Its NVMe interface, reliability, and thermal management features make it an exceptional option for anyone looking to enhance the performance of their computing setup. Whether for gaming, content creation, or general use, the MZMTD256HAGM00000 stands out as a reliable storage solution.