Samsung MZMTD256HAGM00000 manual DDR3 Sdram VLP Registered Modules

Page 5

DDR3 SDRAM Load Reduced REGISTERED MODULES

Density

Voltage

Organization

Part Number

Composition

Compliance

Speed (Mbps)

Ranks

Production

 

 

 

 

 

 

 

 

 

16GB

1.35V

2Gx72

M386B2K70DM0-YH90

4Gb DDP (1G x4) * 36

Lead Free & Halogen Free

1333

4

Now

 

 

 

M386B4G70BM0-YK0(3/4)/

8Gb DDP (2G x4) * 36

Lead Free & Halogen Free

1333/1600/1866

4

Now

 

 

 

CMA(3/4)

32GB

1.35V/1.5V

4Gx72

 

 

 

 

 

M386B4G70DM0-YK0(3/4)/

8Gb DDP (2G x4) * 36

Lead Free & Halogen Free

1600/1866

4

Q3'13

 

 

 

 

 

 

CMA(3/4)

 

 

 

 

 

 

 

 

64GB

1.35V/1,5V

8Gx72

M386B8G70BO0-YH94/CK04

4Gb QDP (4G x4) * 36

Lead Free & Halogen Free

1333/1600

8

Now

 

 

 

 

 

 

M386B8G70DE0-YH9(4)/CK0(4)

16Gb QDP (4G x4) * 36

Lead Free & Halogen Free

1333/1600

8

Q3'13

 

 

 

Notes

0 = Inphi iMB GS02A

 

 

 

 

 

 

 

3 = Inphi iMB GS02B

 

 

 

 

 

 

 

4 = Montage C1

 

 

 

 

 

 

 

DDR3 SDRAM VLP REGISTERED MODULES

Density

 

Voltage

 

Organization

 

Part Number

Composition

Compliance

Speed (Mbps)

Ranks

Production

1GB

 

1.5V

 

128Mx72

 

M392B2873GB0-C(F8/H9/K0/MA)(08/09)

1Gb (128M x8) * 9

Lead Free & Halogen Free,

1066/1333/1600/1866

1

Now

 

 

 

 

 

 

Flip Chip

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B5673GB0-C(F8/H9/K0/MA)(08/09)

1Gb (128M x8) * 18

Lead Free & Halogen Free,

1066/1333/1600/1866

2

Now

 

 

 

 

 

 

Flip Chip

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2GB

 

1.5V

 

256Mx72

 

M392B5670GB0-C(F8/H9/K0/MA)(08/09)

1Gb (256M x8) * 18

Lead Free & Halogen Free,

1066/1333/1600/1866

1

Now

 

 

 

 

 

 

Flip Chip

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B5773DH0-C(F8/H9/K0/MA)(08/09)

2Gb (256M x8) * 9

Lead Free & Halogen Free

1066/1333/1600/1866

1

Now

 

 

 

 

 

 

 

 

 

 

 

 

4GB

 

1.5V

 

512Mx72

 

M392B5273DH0-C(F8/H9/K0/MA)(08/09)

2Gb (256M x8) * 18

Lead Free & Halogen Free

1066/1333/1600/1866

2

Now

 

 

 

 

 

 

 

 

 

 

 

 

M392B5270DH0-C(F8/H9/K0/MA)(08/09)

2Gb (512M x4) * 18

Lead Free & Halogen Free

1066/1333/1600/1866

1

Now

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B1K73DM0-C(F8/H9)(08/09)

2Gb DDP (512M x8) * 18

Lead Free & Halogen Free

1066/1333

4

Now

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B1K70DM0-C(F8/H9/K0/MA)(08/09)

2Gb DDP (1G x4) * 18

Lead Free & Halogen Free

1066/1333/1600/1866

2

Now

 

 

 

 

 

 

 

 

 

 

 

 

8GB

 

1.5V

 

1Gx72

 

M392B1G73BH0-C(F8/H9/K0/MA)(08/09)

4Gb (512M x8) * 18

Lead Free & Halogen Free

1066/1333/1600/1866

1

Now

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B1G73DB0-CMA (08/09)

4Gb (512M x8) * 18

Lead Free & Halogen Free

1866

1

Q3'13

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B1G70BH0-C(F8/H9/K0/MA)(08/09)

4Gb (1G x4) * 18

Lead Free & Halogen Free

1066/1333/1600/1866

1

Now

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B2G70BM0-C(F8/H9/K0/MA)(08/09)

8Gb DDP (2G x4) * 18

Lead Free & Halogen Free

1066/1333/1600/1866

2

Now

 

 

 

 

 

 

 

 

 

 

 

 

16GB

 

1.5V

 

2Gx72

 

M392B2G70DM0-YK0/CMA (03/04)

8Gb DDP (2G x4) * 18

Lead Free & Halogen Free

1600/1866

2

Q3'13

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B2G73BM0-C(F8/H9)(08/09)

4Gb DDP (1G x8) * 18

Lead Free & Halogen Free

1066/1333

4

Now

 

 

 

 

 

 

 

 

 

 

 

 

2GB

 

1.35V

 

256Mx72

 

M392B5773DH0-Y(F8/H9/K0)(08/09)

2Gb (256M x8) * 9

Lead Free & Halogen Free

1066/1333/1600

1

Now

 

 

 

 

 

 

 

 

 

 

 

 

4GB

 

1.35V

 

512Mx72

 

M392B5273DH0-Y(F8/H9/K0)(08/09)

2Gb (256M x8) * 18

Lead Free & Halogen Free

1066/1333/1600

2

Now

 

 

 

 

 

 

 

 

 

 

M392B5270DH0-Y(F8/H9/K0)(08/09)

2Gb (512M x4) * 18

Lead Free & Halogen Free

1066/1333/1600

1

Now

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B1K73DM0-Y(F8/H9)(08/09)

4Gb DDP (512M x8) * 18

Lead Free & Halogen Free

1066/1333

4

Now

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B1K70DM0-Y(F8/H9/K0)(08/09)

2Gb DDP (1G x4) * 18

Lead Free & Halogen Free

1066/1333/1600

2

Now

 

 

 

 

 

 

 

 

 

 

 

 

8GB

 

1.35V

 

1Gx72

 

M392B1G73BH0-Y(F8/H9/K0)(08/09)

4Gb (512M x8) * 18

Lead Free & Halogen Free

1066/1333/1600

2

Now

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B1G73DB0-YK0/CMA (03/04)

4Gb (512M x8) * 18

Lead Free & Halogen Free

1600/1866

2

Now

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M392B1G70BH0-Y(F8/H9/K0)(08/09)

4Gb (1G x4) * 18

Lead Free & Halogen Free

1066/1333/1600

1

Now

 

 

 

 

 

 

 

 

 

 

 

 

16GB

 

1.35V

 

2Gx72

 

M392B2G70BM0-Y(F8/H9/K0)(08/09)

8Gb DDP (2G x4) * 18

Lead Free & Halogen Free

1066/1333/1600

2

Now

 

 

 

 

 

 

 

 

 

 

 

 

M392B2G70DM0-YK0 (03/04)

8Gb DDP (1G x8) * 18

Lead Free & Halogen Free

1600

4

Now

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

32GB

 

1.35V

 

4Gx72

 

M392B4G70BE0-Y(F8/H9)(08)

4Gb QDP (4G x4) * 18

Lead Free & Halogen Free

1066/1333

4

Now

 

 

 

 

 

 

 

 

 

 

 

 

Notes:

 

04 = IDT B0 register

 

F8 = DDR3-1066 (7-7-7)

 

 

 

 

 

 

 

05 = Inphi C0 register

 

H9 = DDR3-1333 (9-9-9)

 

 

 

 

 

 

 

08 = IDT A1

 

K0 = DDR3-1600 (11-11-11)

 

 

 

 

 

 

 

09 = Inphi UV GS02

 

MA = DDR3-1866 (13-13-13)

 

 

 

 

 

DRAM

samsung.com/dram

2H 2013

DDR3 SDRAM

5

 

 

Image 5
Contents Productselectionguide Samsung Semiconductor, Inc Dram DDR4 Sdram Load Reduced Modules DDR4 Sdram Registered ModulesDDR3 Sdram Registered Modules M386A4GDM0-CPBDDR3 Sdram DDR3 Sdram VLP Registered Modules1GB DDR3 Sdram Unbuffered ModulesDDR3 Sdram ECC Sodimm Modules DDR3 Sdram Sodimm Modules2GB 4GBFbga DDR3 Sdram ComponentsDDR2 Sdram Components Graphics Dram Components DDR Sdram ComponentsMobile Dram Components Component Dram Ordering Information 2A 2.86ns 350MHz 07 0.71ns 1400MHz XDR Dram Boclf P BOC25 2.5ns 400MHz DDR3 Sdram 1.5V VDD DDR Sdram 2.5V VDD DDR2 Sdram 1.8V VDD Dimm SodimmX16 4 Stack Jedec Standard 8 Stack Jedec Standard Intel 8 IDT Montage Dram Ordering InformationK9WAG08U1E-SIB0 K9WAG08U1E-SCB0 TSOP1-LF/HFTSOP1 LF/HF FBGA-LF/HF8GB MMCTR08G3ACH-QNJ00 CL4 2GB MMAUR02G3ACA-QNJ00 CL4 4GB MMBTR04G3CCA-QNJ00MMCTR16GUACJ-SAC00 MMCTR32GUACJ-SAC00Iops 4GB MMCKLM4G1YEMD-C031 KLM8G1WEMB-B031MZ7TD120HAFV-000DA EOL EOLMZ7TD240HAFV-000DA EOL MZ7TD480HAGM-000DA EOLSLC Single S/B MLC QDP SLC DDP MLC DDP MLC DSP SLC DSPCOB Chip BIZ D 63-TBGAMulti-Chip Packages EMCP = eMMC + LPDDR1 or LPDDR2 or LPDDR34Gb 3V/1.8V 1.8V/1.2V 162FBGA 11.5x13mm 4Gb*2 x32, 1ch, 2CS 4Gb*2 x32, 1ch, 2CS 3V/1.8V 1.8V/1.2V 221FBGA 11.5x13mm4Gb*2 x32, 1ch, 2CS 3V/1.8V 1.8V/1.2V 162FBGA 11.5x13mm 512Mb 3V/1.8V 153FBGA 11.5x13mmSSDs Samsung Solid State DrivesSata Did Designed for TV signalsExclusive Years Narrow Hours + 450 to 1500 nits Heavy High-value commercial rangeFHD LEDCcfl NEWPPI HrgbPLS Wxga PLS WsvgaLCD SlsiOregon Slsi WashingtonKansas UtahIowa ONTARIO-CANADA SlsiGeorgia Alabama SlsiNorth Carolina FloridaDisplays

MZMTD256HAGM00000 specifications

The Samsung MZMTD256HAGM00000 is a high-performance solid-state drive (SSD) designed to meet the demands of modern computing. As a member of Samsung's renowned line of M.2 NVMe SSDs, it offers a combination of speed, reliability, and efficiency, making it an excellent choice for both consumer and enterprise applications.

One of the key features of the MZMTD256HAGM00000 is its use of the NVMe (Non-Volatile Memory Express) interface, which drastically improves data transfer rates compared to traditional SATA interfaces. With NVMe, the drive can communicate directly with the motherboard via the PCIe (Peripheral Component Interconnect Express) bus, allowing it to leverage multiple lanes for data transfer. This results in significantly lower latency and higher throughput, which is crucial for tasks that require quick access to large files, such as video editing, gaming, and data analysis.

The MZMTD256HAGM00000 comes with a storage capacity of 256 GB, providing ample space for a wide array of applications and files. The use of Samsung's advanced V-NAND technology enhances the drive’s performance and endurance. V-NAND architecture allows for more cells to be stacked vertically, which not only optimizes performance but also increases the storage density, leading to improved power efficiency.

In terms of performance, the Samsung MZMTD256HAGM00000 delivers impressive read and write speeds, making it an ideal choice for users seeking fast boot times and quick file transfers. Sequential read speeds can reach up to 500 MB/s, while write speeds also achieve commendable performance, catering to demanding workloads and ensuring smooth multitasking.

The drive also features Samsung’s Dynamic Thermal Guard technology, which helps maintain optimal operating temperatures. This feature protects the SSD from overheating during intense workloads, ensuring reliability and longevity of the drive. Additionally, the MZMTD256HAGM00000 is built with a robust error correction code (ECC) and supports TRIM technology, enhancing overall data integrity and performance.

Furthermore, the compact M.2 form factor of the MZMTD256HAGM00000 allows for easy installation in various computing devices, including laptops, desktops, and gaming rigs. Its lightweight design contributes to the overall efficiency and portability of the system.

In summary, the Samsung MZMTD256HAGM00000 is a powerful SSD that combines advanced technology with high storage capacity and speed. Its NVMe interface, reliability, and thermal management features make it an exceptional option for anyone looking to enhance the performance of their computing setup. Whether for gaming, content creation, or general use, the MZMTD256HAGM00000 stands out as a reliable storage solution.