Samsung MZMTD256HAGM00000 manual Mlc Qdp Slc Ddp Mlc Ddp Mlc Dsp Slc Dsp, SLC Single S/B, Cob

Page 17

FLASH ProductS Ordering Information

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

K

9

X

X

X

X

X

X

X

X

-

X

X

X

X

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SAMSUNG Memory

 

 

 

 

 

 

 

 

 

 

 

 

 

Pre-Program Version

NAND Flash

 

 

 

 

 

 

 

 

 

 

 

 

 

Customer Bad Block

Small Classification

 

 

 

 

 

 

 

 

 

 

 

 

 

Temp

Density

 

 

 

 

 

 

 

 

 

 

 

 

 

Package

Density

 

 

 

 

 

 

 

 

 

 

 

 

 

---

Organization

 

 

 

 

 

 

 

 

 

 

 

 

 

Generation

Organization

 

 

 

 

 

 

 

 

 

 

 

 

 

Mode

Vcc

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

- SSD

1.Memory (K)

2.NAND Flash : 9

3.Small Classification

(SLC : Single Level Cell, MLC : Multi Level Cell)

7 : SLC eMMC

8 : MLC eMMC

F : SLC Normal

G : MLC Normal

H : MLC QDP

K : SLC DDP

L : MLC DDP

M : MLC DSP

N : SLC DSP

P : MLC 8 Die Stack

Q : SLC 8 Die Stack

S : SLC Single SM

T : SLC SINGLE (S/B)

U : 2 Stack MSP

W : SLC 4 Die Stack

4~5. Density

12 : 512M

56 : 256M

1G : 1G

2G : 2G

4G : 4G

8G : 8G

AG: 16G

BG: 32G

CG: 64G

DG : 128G

EG : 256G

LG : 24G

NG : 96G

ZG : 48G

00 : NONE

6~7. Organization

00 : NONE

08 : x8

16 : x16

8. Vcc

A : 1.65V~3.6V

B : 2.7V (2.5V~2.9V)

C : 5.0V (4.5V~5.5V)

D : 2.65V (2.4V~2.9V)

E : 2.3V~3.6V

R : 1.8V (1.65V~1.95V)

Q : 1.8V (1.7V~1.95V)

T : 2.4V~3.0V

U : 2.7V~3.6V

V : 3.3V (3.0V~3.6V)

W : 2.7V~5.5V, 3.0V~5.5V

0 : NONE

9. Mode

 

0 : Normal

1 : Dual nCE & Dual R/nB

3 : Tri/CE & Tri R/B

4 : Quad nCE & Single R/nB

5 : Quad nCE & Quad R/nB

9 : 1st block OTP

A : Mask Option 1

L : Low grade

10. Generation

M : 1st Generation

A : 2nd Generation

B : 3rd Generation

C : 4th Generation

D : 5th Generation

11.----

12.Package

A : COB

B : FBGA (Halogen-Free, Lead-Free)

C : CHIP BIZ D : 63-TBGA

F : WSOP (Lead-Free) G : FBGA

H : TBGA (Lead-Free)

I : ULGA (Lead-Free) (12*17)

J : FBGA (Lead-Free)

L : ULGA (Lead-Free) (14*18)

M : TLGA N : TLGA2

P : TSOP1 (Lead-Free)

Q : TSOP2 (Lead-Free)

S : TSOP1 (Halogen-Free, Lead-Free)

T : TSOP2 U : COB (MMC)

V : WSOP W : Wafer

Y : TSOP1 Z : WELP (Lead-Free)

13. Temp

C : Commercial I : Industrial

0 : NONE (Containing Wafer, CHIP, BIZ, Exception

handling code)

14. Customer Bad Block

B : Include Bad Block

D : Daisychain Sample

L : 1~5 Bad Block

N : ini. 0 blk, add. 10 blk

S : All Good Block

0 : NONE (Containing Wafer, CHIP, BIZ, Exception handling code)

15. Pre-Program Version

0 : None

Serial (1~9, A~Z)

FLASH

samsung.com/flash

2H 2013

Flash Products Ordering Information

17

 

 

Image 17
Contents Productselectionguide Samsung Semiconductor, Inc Dram DDR4 Sdram Load Reduced Modules DDR4 Sdram Registered ModulesDDR3 Sdram Registered Modules M386A4GDM0-CPBDDR3 Sdram DDR3 Sdram VLP Registered Modules1GB DDR3 Sdram Unbuffered ModulesDDR3 Sdram ECC Sodimm Modules DDR3 Sdram Sodimm Modules2GB 4GBFbga DDR3 Sdram ComponentsDDR2 Sdram Components Graphics Dram Components DDR Sdram ComponentsMobile Dram Components Component Dram Ordering Information 2A 2.86ns 350MHz 07 0.71ns 1400MHz XDR Dram Boclf P BOC25 2.5ns 400MHz DDR3 Sdram 1.5V VDD DDR Sdram 2.5V VDD DDR2 Sdram 1.8V VDD Dimm SodimmX16 4 Stack Jedec Standard 8 Stack Jedec Standard Intel 8 IDT Montage Dram Ordering InformationK9WAG08U1E-SIB0 K9WAG08U1E-SCB0 TSOP1-LF/HFTSOP1 LF/HF FBGA-LF/HF8GB MMCTR08G3ACH-QNJ00 CL4 2GB MMAUR02G3ACA-QNJ00 CL4 4GB MMBTR04G3CCA-QNJ00MMCTR16GUACJ-SAC00 MMCTR32GUACJ-SAC00Iops 4GB MMCKLM4G1YEMD-C031 KLM8G1WEMB-B031MZ7TD120HAFV-000DA EOL EOLMZ7TD240HAFV-000DA EOL MZ7TD480HAGM-000DA EOLSLC Single S/B MLC QDP SLC DDP MLC DDP MLC DSP SLC DSPCOB Chip BIZ D 63-TBGAMulti-Chip Packages EMCP = eMMC + LPDDR1 or LPDDR2 or LPDDR34Gb 3V/1.8V 1.8V/1.2V 162FBGA 11.5x13mm 4Gb*2 x32, 1ch, 2CS 4Gb*2 x32, 1ch, 2CS 3V/1.8V 1.8V/1.2V 221FBGA 11.5x13mm4Gb*2 x32, 1ch, 2CS 3V/1.8V 1.8V/1.2V 162FBGA 11.5x13mm 512Mb 3V/1.8V 153FBGA 11.5x13mmSSDs Samsung Solid State DrivesSata Did Designed for TV signalsExclusive Years Narrow Hours + 450 to 1500 nits Heavy High-value commercial rangeFHD LEDCcfl NEWPPI HrgbPLS Wxga PLS WsvgaLCD SlsiOregon Slsi WashingtonKansas UtahIowa ONTARIO-CANADA SlsiGeorgia Alabama SlsiNorth Carolina FloridaDisplays

MZMTD256HAGM00000 specifications

The Samsung MZMTD256HAGM00000 is a high-performance solid-state drive (SSD) designed to meet the demands of modern computing. As a member of Samsung's renowned line of M.2 NVMe SSDs, it offers a combination of speed, reliability, and efficiency, making it an excellent choice for both consumer and enterprise applications.

One of the key features of the MZMTD256HAGM00000 is its use of the NVMe (Non-Volatile Memory Express) interface, which drastically improves data transfer rates compared to traditional SATA interfaces. With NVMe, the drive can communicate directly with the motherboard via the PCIe (Peripheral Component Interconnect Express) bus, allowing it to leverage multiple lanes for data transfer. This results in significantly lower latency and higher throughput, which is crucial for tasks that require quick access to large files, such as video editing, gaming, and data analysis.

The MZMTD256HAGM00000 comes with a storage capacity of 256 GB, providing ample space for a wide array of applications and files. The use of Samsung's advanced V-NAND technology enhances the drive’s performance and endurance. V-NAND architecture allows for more cells to be stacked vertically, which not only optimizes performance but also increases the storage density, leading to improved power efficiency.

In terms of performance, the Samsung MZMTD256HAGM00000 delivers impressive read and write speeds, making it an ideal choice for users seeking fast boot times and quick file transfers. Sequential read speeds can reach up to 500 MB/s, while write speeds also achieve commendable performance, catering to demanding workloads and ensuring smooth multitasking.

The drive also features Samsung’s Dynamic Thermal Guard technology, which helps maintain optimal operating temperatures. This feature protects the SSD from overheating during intense workloads, ensuring reliability and longevity of the drive. Additionally, the MZMTD256HAGM00000 is built with a robust error correction code (ECC) and supports TRIM technology, enhancing overall data integrity and performance.

Furthermore, the compact M.2 form factor of the MZMTD256HAGM00000 allows for easy installation in various computing devices, including laptops, desktops, and gaming rigs. Its lightweight design contributes to the overall efficiency and portability of the system.

In summary, the Samsung MZMTD256HAGM00000 is a powerful SSD that combines advanced technology with high storage capacity and speed. Its NVMe interface, reliability, and thermal management features make it an exceptional option for anyone looking to enhance the performance of their computing setup. Whether for gaming, content creation, or general use, the MZMTD256HAGM00000 stands out as a reliable storage solution.