Samsung 1H 2011 Mlc Qdp Slc Ddp Mlc Ddp Mlc Dsp Slc Dsp, SLC Single S/B, Cob, Chip BIZ D 63-TBGA

Page 15

FLASH Product Ordering Information

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

K

9

X

X

X

X

X

X

X

X

-

X

X

X

X

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SAMSUNG Memory

 

 

 

 

 

 

 

 

 

 

 

 

 

Pre-Program Version

NAND Flash

 

 

 

 

 

 

 

 

 

 

 

 

 

Customer Bad Block

Small Classification

 

 

 

 

 

 

 

 

 

 

 

 

 

Temp

Density

 

 

 

 

 

 

 

 

 

 

 

 

 

Package

Density

 

 

 

 

 

 

 

 

 

 

 

 

 

---

Organization

 

 

 

 

 

 

 

 

 

 

 

 

 

Generation

Organization

 

 

 

 

 

 

 

 

 

 

 

 

 

Mode

Vcc

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A SH

1.Memory (K)

2.NAND Flash : 9

3.Small Classification

(SLC : Single Level Cell, MLC : Multi Level Cell)

7 : SLC moviNAND

8 : MLC moviNAND

F : SLC Normal

G : MLC Normal

H : MLC QDP

K : SLC DDP

L : MLC DDP

M : MLC DSP

N : SLC DSP

P : MLC 8 Die Stack

Q : SLC 8 Die Stack

S : SLC Single SM

T : SLC SINGLE (S/B)

U : 2 Stack MSP

W : SLC 4 Die Stack

4~5. Density

12 : 512M

56 : 256M

1G : 1G

2G : 2G

4G : 4G

8G : 8G

AG : 16G BG :

32G CG : 64G

DG : 128G

EG : 256G

LG : 24G

NG : 96G

ZG : 48G

00 : NONE

6~7. Organization

00 : NONE

08 : x8

16 : x16

8. Vcc

A : 1.65V~3.6V

B : 2.7V (2.5V~2.9V)

C : 5.0V (4.5V~5.5V)

D : 2.65V (2.4V~2.9V)

E : 2.3V~3.6V

R : 1.8V (1.65V~1.95V)

Q : 1.8V (1.7V~1.95V)

T : 2.4V~3.0V

U : 2.7V~3.6V

V : 3.3V (3.0V~3.6V)

W : 2.7V~5.5V, 3.0V~5.5V

0 : NONE

9. Mode

 

0 : Normal

1 : Dual nCE & Dual R/nB

3 : Tri /CE & Tri R/B

4 : Quad nCE & Single R/nB

5 : Quad nCE & Quad R/nB

9 : 1st block OTP

A : Mask Option 1

L : Low grade

10. Generation

M : 1st Generation

A : 2nd Generation

B : 3rd Generation

C : 4th Generation

D : 5th Generation

11.----”

12.Package

A : COB

B : FBGA (Halogen-Free, Lead-Free)

C : CHIP BIZ D : 63-TBGA

F : WSOP (Lead-Free) G : FBGA

H : TBGA (Lead-Free)

I : ULGA (Lead-Free) (12*17)

J : FBGA (Lead-Free)

L : ULGA (Lead-Free) (14*18)

M : TLGA N : TLGA2

P : TSOP1 (Lead-Free)

Q : TSOP2 (Lead-Free)

S : TSOP1 (Halogen-Free, Lead-Free)

T : TSOP2 U : COB (MMC)

V : WSOP W : Wafer

Y : TSOP1 Z : WELP (Lead-Free)

13. Temp

C : Commercial I : Industrial

0 : NONE (Containing Wafer, CHIP, BIZ, Exception

handling code)

14. Customer Bad Block

B : Include Bad Block

D : Daisychain Sample

L : 1~5 Bad Block

N : ini. 0 blk, add. 10 blk

S : All Good Block

0 : NONE (Containing Wafer, CHIP, BIZ, Exception handling code)

15. Pre-Program Version

0 : None

Serial (1~9, A~Z)

FL

samsung.com/semi/flash

1H 2011

Flash Ordering Information

15

 

 

Image 15
Contents Product Selection Guide Samsung Semiconductor, Inc MULTI-CHIP Package DDR3 Sdram DDR3 Sdram Registered Modules1066/1333/1600 Now 16GB 2Gx72 DDR3 Sdram VLP Registered ModulesDDR3 Sdram Unbuffered Modules DDR3 Sdram Unbuffered Modules ECCDDR3 Sdram Sodimm Modules DDR2 Sdram Fully Buffered Modules DDR3 Sdram ComponentsDDR2 Sdram Registered Modules DDR2 Sdram VLP Registered ModulesDDR2 Sdram Components DDR2 Sdram Unbuffered ModulesDDR2 Sdram Unbuffered Modules ECC DDR2 Sdram Sodimm ModulesGraphics Dram Components Component Dram Ordering Information XDR Dram Boclf P BOC Temp & Power Common Temp, PowerDDR3 Sdram 1.5V VDD DDR Sdram 2.5V VDD DDR2 Sdram 1.8V VDD Dimm SodimmK9WCGD8S5M-HCB BGA K9QDGD8S5M-HCB BGAK9QDGD8U5M-HCB BGA K9QDG08U5M-HCB BGAK9ACGD8U0M-SCB 52LGA K9PFGD8U5M-HCE BGAK9HDGD8U5M-HCE BGA K9LCGD8U1M-HCE BGAChip BIZ D 63-TBGA MLC QDP SLC DDP MLC DDP MLC DSP SLC DSPSLC Single S/B COBSPB High-Speed Asynchronous SramFT SB NtRAMSIO-2B DDRCIO-2B CIO-4BQDR II 2B QDRQDR II-2B QDR II-4BTray 25 3.3V,LVTTL,SB-FT WideNONE,NONE Tape & Reel186FBGA/162FBGA 137FBGA240FBGA POP 240FGBA POPHD255GJ RPMHD165GJ HD166GJHM322IX HM162HXM7U HM252HXSata Sata DVDPata DVD Did Did Product ClassificationTBD CcflLED FHDPLS Wxga HrgbPPI PLS WsvgaMemory