Samsung 1H 2011 manual CIO-4B, SIO-2B, Cio/Sio, Ddrii + CIO-2B, Ddr Ii+

DDR Synchronous SRAM

Type	Density Organization		Part Number	Package	Vdd (V)	Access Time	Cycle Time	I/O Voltage	Production	Comments
						tCD (ns)		(V)	Status
	16Mb	512Kx36	K7D163674B	153-BGA	1.8~2.5	2.3	330, 300	1.5~1.9	Mass Production
DDR		1Mx18	K7D161874B	153-BGA	1.8~2.5	2.3	330, 300	1.5~1.9	Mass Production
	8Mb	256Kx36	K7D803671B	153-BGA	2.5	1.7/1.9/2.1	333, 330, 250	1.5 (Max 2.0)	Not for new designs
		512Kx18	K7D801871B	153-BGA	2.5	1.7/1.9/2.1	333, 330, 250	1.5 (Max 2.0)	Not for new designs
			K7I641882M	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	CIO-2B
		4Mx18	K7I641884M	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	CIO-4B
	72Mb		K7J641882M	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	SIO-2B
			K7I643682M	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	CIO-2B
		2Mx36	K7I643684M	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	CIO-4B
			K7J643682M	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	SIO-2B
			K7I321882C	165-FBGA	1.8	0.45	300,250	1.5,1.8	Mass Production	CIO-2B
		2Mx18	K7I321884C	165-FBGA	1.8	0.45	300,250	1.5,1.8	Mass Production	CIO-4B
DDR II	36Mb		K7J321882C	165-FBGA	1.8	0.45	300,250	1.5,1.8	Mass Production	SIO-2B
CIO/SIO			K7I323682C	165-FBGA	1.8	0.45	300,250	1.5,1.8	Mass Production	CIO-2B
		1Mx36	K7I323684C	165-FBGA	1.8	0.45	300,250	1.5,1.8	Mass Production	CIO-4B
			K7J323682C	165-FBGA	1.8	0.45	300,250	1.5,1.8	Mass Production	SIO-2B
			K7I161882B	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	CIO-2B
		1Mx18	K7I161884B	165-FBGA	1.8	0.45,0.45,0.45,0.50	250,200,167	1.5,1.8	Mass Production	CIO-4B
	18Mb		K7J161882B	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	SIO-2B
			K7J163682B	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	SIO-2B
		512Kx36	K7I163682B	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	CIO-2B
			K7I163684B	165-FBGA	1.8	0.45,0.45,0.45,0.50	250,200,167	1.5,1.8	Mass Production	CIO-4B
			K7K3218T2C	165-FBGA	1.8	0.45	400	1.5	Mass Production	DDRII + CIO-2B,
										2 clocks latancy
		2Mx18
			K7K3218U2C	165-FBGA	1.8	0.45	400	2.5	Mass Production	DDRII + CIO-2B,
										2.5 clocks latancy
	36Mb
			K7K3236T2C	165-FBGA	1.8	0.45	400, 333	1.5	Mass Production	DDRII + CIO-2B,
										2 clocks latancy
		1Mx36
DDR II+
			K7K3236U2C	165-FBGA	1.8	0.45	400, 334	2.5	Mass Production	DDRII + CIO-2B,
CIO										2.5clocks latancy
			K7K1618T2C	165-FBGA	1.8	0.45	400, 333	1.5	Mass Production	DDRII + CIO-2B,
										2 clocks latancy
		1Mx18
	18Mb		K7K1618U2C	165-FBGA	1.8	0.45	400, 334	2.5	Mass Production	DDRII + CIO-2B,
										2.5clocks latancy
		512Kx36	K7K1636T2C	165-FBGA	1.8	0.45	400, 333	1.5	Mass Production	DDRII + CIO-2B,
										2 clocks latancy
NOTES:	2B = Burst of 2		For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit
	4B = Burst of 4		For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz
	SIO = Separate I/O
	CIO = Common I/O

18DDR I / II / II+

1H 2011

samsung.com/semi/sram