Samsung 1H 2011 manual Temp & Power Common Temp, Power, XDR Dram Boclf P BOC

COMPONENT DRAM ORDERING INFORMATION

1	2	3	4	5	6	7	8	9	10	11
K	4	T	XX	XX	X	X	X	X	X	XX
SAMSUNG Memory										Speed
DRAM										Temp & Power
DRAM Type										Package Type
										Revision
Density
										Interface (VDD, VDDQ)
Bit Organization
										Number of Internal Banks

DR AM

XDR DRAM

J: BOC(LF) P: BOC

Mobile DRAM

Leaded / Lead Free

G/A: 52balls FBGA Mono

R/B: 54balls FBGA Mono

X /Z: 54balls BOC Mono

J /V: 60(72)balls FBGA Mono 0.5pitch

L /F: 60balls FBGA Mono 0.8pitch

S/D: 90balls FBGA

Monolithic (11mm x 13mm)

F/H: Smaller 90balls FBGA Mono

Y/P: 54balls CSP DDP

M/E: 90balls FBGA DDP

10.Temp & Power - COMMON (Temp, Power)

C:Commercial, Normal (0’C – 95’C) & Normal Power

C:(Mobile Only) Commercial (-25 ~ 70’C), Normal Power

J: Commercial, Medium

L:Commercial, Low (0’C – 95’C) & Low Power

L:(Mobile Only) Commercial, Low, i-TCSR

F:Commercial, Low, i-TCSR & PASR & DS

E:Extended (-25~85’C), Normal

N:Extended, Low, i-TCSR

G:Extended, Low, i-TCSR & PASR & DS

I:Industrial, Normal (-40’C – 85’C) & Normal Power

P:Industrial, Low (-40’C – 85’C) & Low Power

H:Industrial, Low, i-TCSR & PASR & DS

11.Speed (Wafer/Chip Biz/BGD: 00)

DDR SDRAM

CC:DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) B3: DDR333 (166MHz @ CL=2.5, tRCD=3,

tRP=3) *1

A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)

B0: DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)

Note 1: "B3" has compatibility with "A2" and "B0"

DDR2 SDRAM

CC:DDR2-400 (200MHz @ CL=3, tRCD=3, tRP=3)

D5: DDR2-533 (266MHz @ CL=4, tRCD=4,

tRP=4)

E6: DDR2-667 (333MHz @ CL=5, tRCD=5,

tRP=5)

F7: DDR2-800 (400MHz @ CL=6, tRCD=6,

tRP=6)

E7: DDR2-800 (400MHz @ CL=5, tRCD=5,

tRP=5)

DDR3 SDRAM

F7: DDR3-800 (400MHz @ CL=6, tRCD=6,

tRP=6)

F8: DDR3-1066 (533MHz @ CL=7, tRCD=7,

tRP=7)

G8: DDR3-1066 (533MHz @ CL=8, tRCD=8,

tRP=8)

H9: DDR3-1333 (667MHz @ CL=9, tRCD=9,

tRP=9)

K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,

tRP=11)

Graphics Memory

18:1.8ns (550MHz)

04:0.4ns (2500MHz)

20:2.0ns (500MHz)

05:0.5ns (2000MHz)

22:2.2ns (450MHz) 5C: 0.56ns (1800MHz)

25:2.5ns (400MHz)

06:0.62ns (1600MHz) 2C: 2.66ns (375MHz) 6A: 0.66ns (1500MHz)

2A: 2.86ns (350MHz)

07:0.71ns (1400MHz)

33:3.3ns (300MHz) 7A: 0.77ns (1300MHz)

36:3.6ns (275MHz)

08:0.8ns (1200MHz)

40:4.0ns (250MHz)

09:0.9ns (1100MHz)

45:4.5ns (222MHz) 1 : 1.0ns (1000MHz) 50/5A: 5.0ns (200MHz)

1 : 1.1ns (900MHz)

55:5.5ns (183MHz)

12:1.25ns (800MHz)

60:6.0ns (166MHz)

14:1.4ns (700MHz)

16:1.6ns (600MHz)

SDRAM (Default CL=3)

50:5.0ns (200MHz CL=3)

60:6.0ns (166MHz CL=3)

67:6.7ns

75:7.5ns PC133 (133MHz CL=3)

XDR DRAM

A2: 2.4Gbps, 36ns, 16Cycles

B3: 3.2Gbps, 35ns, 20Cycles

C3: 3.2Gbps, 35ns, 24Cycles

C4: 4.0Gbps, 28ns, 24Cycles

DS: Daisychain Sample

Mobile-SDRAM

60:166MHz, CL 3

75:133MHz, CL 3

80:125MHz, CL 3 1H: 105MHz, CL 2 1L: 105MHz, CL 3

15:66MHz, CL 2 & 3

Mobile-DDR

C3: 133MHz, CL 3

C2: 100MHz, CL 3

C0: 66MHz, CL 3

Note: All of Lead-free or Halogen-free product are in compliance with RoHS

samsung.com/semi/dram

1H 2011

DRAM Ordering Information 11