Samsung M1D8SCE, M198SCE owner manual Setting Cooking Times & Power Levels

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OPERATION

Setting Cooking Times & Power Levels

Your microwave allows you to set up to three differ- ent stages of cooking, each with its own time length and power level. The power level lets you control the heating intensity from Warm (1) to High (0).

One-stage Cooking

For simple one-stage cooking, you only need to set a cooking time. The power level is automatically set at High. If you want the power set at any other level, you must set it using the Power Level button.

Setting Cooking Times, continued

Some recipes require different stages of cooking at different temperatures. You can set multiple stages of cooking with your microwave.

Multi-stage Cooking

1Follow steps 1 and 2 in the “One-Stage Cooking” section on this page. The dis- play shows “PRESS START OR ENTER NEXT STAGE COOKING TIME.”

1 Use the number buttons to set a cooking time. You can set a time from one second to 99 minutes, 99 seconds. To set a time over one minute, enter the seconds too.

For example, to set 20 minutes, enter 2, 0, 0, 0 .

2 If you want to set the power level to something other than High, press the Power Level button, then use the number buttons to enter a power level.

Power Levels:

1

= warm

6

= simmer

2

= low

7

= medium high

3

= defrost

8

= reheat

4

= medium low

9

= sauté

5

= medium

0

= high

The display shows “PRESS START OR ENTER NEXT STAGE COOKING TIME”

3 Press the Start button to begin cooking. If you want to change the power level, press Pause/Cancel before you press Start, and reenter all of the instructions.

When entering more than one cooking stage, the Power Level button must be pressed before the second cooking stage can be entered.

To set the power level at High for a stage of cook- ing, press the Power Level button twice.

2Use the Number buttons to set a second cooking time.

3Press the Power Level button, then use the number buttons to set the power level of the second stage of cooking. The display shows the power level you have set and then “PRESS START OR ENTER NEXT STAGE COOKING TIME.”

4Press Start to begin cooking, or repeat steps 2 and 3 to set a cooking time and power level for a third stage of cooking. When finished, press Start.

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Contents Microwave Oven Safety Safety Precautions Safety Precautions Installing Your Microwave Oven Operation Your New Microwave OvenCooking Instructions AppendixChecking Parts Setting Up Your Microwave OvenThank You for Choosing Samsung Control Panel Buttons Setting the Clock Turning on the Power and Selecting a Display LanguageUsing the Pause/Cancel Button SPANISH/LBS, or SPANISH/KGUsing the Sensor Cook Buttons Using the Help systemServing sizes available for each button Using the Gentle Cook Button Using the One Minute+ ButtonSensor Reheat Press Sensor ReheatDefrosting Automatically Defrosting Guide Setting Cooking Times Setting Cooking Times & Power LevelsFor example, to set 20 minutes, enter 2, 0, 0 Adjusting the Volume Using the More/Less ButtonSetting the Child Protection Lock Using the Kitchen TimerDemonstration Mode Press the Kitchen Timer buttonCooking Utensils Testing UtensilsWax paper Use as a cover to prevent spatter- ing Cooking Techniques Utensils & Cover For Sensor Cooking Auto Sensor CookBacon Pork Boneless or bone-inWhole ChickenFillets SteaksShrimp 200-500 g Let oven cool for at least 5 minutes before using againPlate of food Rice Baby Food FishFrench Onion Soup 4 servings RecipesSnap Crackle Popcorn Balls 10 to 15 balls Peas With Lettuce 4 servingsFranks And Beans Casserole 4 to 6 servings Vegetable Medley 4 to 6 servingsCare and Cleaning Troubleshooting GuideVolume Weight Model Power Source Power ConsumptionMicrowave Outside Oven CavityElectronics

M1D8SCE, M198SCE specifications

The Samsung M1D8SCE and M198SCE are standout memory solutions from a well-renowned leader in the semiconductor industry. Known for their high performance and reliability, these DRAM modules cater to a wide range of applications, including personal computing, gaming, and server environments.

Both M1D8SCE and M198SCE models are built using advanced manufacturing processes and technology, ensuring that they meet the demanding performance requirements of modern computing tasks. One of the key features of these memory modules is their compatibility with the latest DDR4 standards, providing enhanced data transfer rates and improved power efficiency. With a typical speed of 2400 MHz, users can expect reduced latency and increased bandwidth, which significantly improves overall system responsiveness and performance.

The M1D8SCE is particularly noted for its capacity to support dual-channel configurations, enhancing data flow between the memory and the CPU. This enables smoother multitasking and improved performance in memory-intensive applications such as video editing and 3D rendering. On the other hand, the M198SCE version targets high-capacity requirements with options that can reach up to 16GB per module, making it suitable for advanced gaming rigs and professional workstations.

Both models leverage Samsung's proprietary 3D NAND technology, which not only contributes to higher storage density but also enhances reliability and longevity. This technology minimizes the risk of data loss and corruption, critical for data-heavy operations. Additionally, the energy efficiency of these modules, with a typical operating voltage of just 1.2V, contributes to lower overall power consumption, making them an eco-friendly choice.

Furthermore, these memory modules are designed with thermal management in mind. The advanced heat spreader design aids in better heat dissipation, thereby ensuring stable performance even under heavy loads, which is essential for gamers and high-performance computing.

Overall, the Samsung M1D8SCE and M198SCE DRAM modules stand out in the market due to their cutting-edge technologies, robust performance characteristics, and reliability, making them an excellent choice for users looking to upgrade or build high-performance systems. With a clear focus on innovation and quality, Samsung continues to set benchmarks in the memory technology landscape.
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