High to Low Z

CY7C185

Switching Characteristics Over the Operating Range[6]

				7C185-15		7C185-20		7C185-25		7C185-35

Parameter			Description	Min.	Max.	Min.	Max.	Min.	Max.	Min.	Max.	Unit

Read Cycle

tRC	Read Cycle Time			15		20		25		35		ns
tAA	Address to Data Valid				15		20		25		35	ns
tOHA	Data Hold from Address Change			3		5		5		5		ns
tACE1		1 LOW to Data Valid			15		20		25		35	ns
tACE1	CE	1 LOW to Data Valid			15		20		25		35	ns
tACE2	CE2 HIGH to Data Valid				15		20		25		35	ns
tDOE			LOW to Data Valid		8		9		12		15	ns
tDOE	OE		LOW to Data Valid		8		9		12		15	ns
tLZOE			LOW to Low Z	3		3		3		3		ns
tLZOE	OE		LOW to Low Z	3		3		3		3		ns
tHZOE			HIGH to High Z[7]		7		8		10		10	ns
tHZOE	OE		HIGH to High Z[7]		7		8		10		10	ns
tLZCE1		1 LOW to Low Z[8]		3		5		5		5		ns
tLZCE1	CE	1 LOW to Low Z[8]		3		5		5		5		ns
tLZCE2	CE2 HIGH to Low Z			3		3		3		3		ns
tHZCE		1 HIGH to High Z[7, 8]			7		8		10		10	ns
tHZCE	CE	1 HIGH to High Z[7, 8]			7		8		10		10	ns
	CE2 LOW to High Z
tPU		1 LOW to Power-Up		0		0		0		0		ns
tPU	CE	1 LOW to Power-Up		0		0		0		0		ns
	CE2 to HIGH to Power-Up
tPD		1 HIGH to Power-Down			15		20		20		20	ns
tPD	CE	1 HIGH to Power-Down			15		20		20		20	ns
	CE2 LOW to Power-Down
Write Cycle[9]
tWC	Write Cycle Time			15		20		25		35		ns
tSCE1		1 LOW to Write End		12		15		20		20		ns
tSCE1	CE	1 LOW to Write End		12		15		20		20		ns
tSCE2	CE2 HIGH to Write End			12		15		20		20		ns
tAW	Address Set-up to Write End			12		15		20		25		ns
tHA	Address Hold from Write End			0		0		0		0		ns
tSA	Address Set-up to Write Start			0		0		0		0		ns
tPWE			Pulse Width	12		15		15		20		ns
tPWE	WE		Pulse Width	12		15		15		20		ns
tSD	Data Set-up to Write End			8		10		10		12		ns
tHD	Data Hold from Write End			0		0		0		0		ns
tHZWE			LOW to High Z[7]		7		7		7		8	ns
tHZWE	WE		LOW to High Z[7]		7		7		7		8	ns
tLZWE			HIGH to Low Z	3		5		5		5		ns
tLZWE	WE		HIGH to Low Z	3		5		5		5		ns
Notes:

6.Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance.

7.tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in part (b) of AC Test Loads. Transition is measured ± 500 mV from steady state voltage.

8.At any given temperature and voltage condition, tHZCE is less than tLZCE1 and tLZCE2 for any given device.

9.The internal write time of the memory is defined by the overlap of CE1 LOW, CE2 HIGH, and WE LOW. All 3 signals must be active to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.

Document #: 38-05043 Rev. *A

Page 4 of 11

7C185-15, 7C185-20, 7C185-25, 7C185-35 specifications

Cypress 7C185 series, comprising models 7C185-35, 7C185-25, 7C185-20, and 7C185-15, represents a significant leap in advanced semiconductor technology tailored for various applications in the electronics industry. These models are part of a broader family of programmable devices featuring a blend of flash and SRAM, designed to meet the dynamic needs of modern digital systems.

One of the main features across the 7C185 series is the impressive memory density and flexibility they offer. With capacities that allow for substantial code storage and efficient data handling, these devices cater well to applications in embedded systems, automotive controls, and industrial automation. The combination of flash memory technology with SRAM provides users the ability to easily reprogram devices, enabling quick iterations in design and functionality without the need for extensive hardware changes.

In terms of technology, Cypress has incorporated cutting-edge process nodes that result in lower power consumption and enhanced performance. This is notably crucial in battery-operated applications where efficiency is paramount. Furthermore, these chips support low-voltage operation, allowing them to seamlessly integrate into various low-power applications without sacrificing performance reliability.

Another characteristic of the Cypress 7C185 series is their robust security features. Embedded security protocols and encryption capabilities make these devices suitable for applications requiring secure data storage and transmission, fulfilling the modern demand for cybersecurity in IoT devices.

The architecture of these devices is optimized for high-speed access and quick response times, which is essential in applications that require real-time data processing. Enhanced I/O options, including multiple communication interfaces, facilitate connectivity with a broad range of peripherals and systems, making integration into existing infrastructures smoother.

Additionally, these models come with built-in support for various programming standards and methodologies, simplifying the development process for engineers. They also provide extensive support documentation and development tools from Cypress, enabling developers to leverage the full potential of the device easily.

In summary, the Cypress 7C185-35, 7C185-25, 7C185-20, and 7C185-15 chips embody a blend of high memory capacity, energy efficiency, robust security, and versatile integration capabilities, making them a reliable choice for today's complex electronic applications. Their advanced features position them as pivotal components in driving innovation across various sectors, including consumer electronics, automotive, and industrial automation.

Cypress 7C185-35, 7C185-15 Switching Characteristics Over the Operating Range6, High to Low Z

Models: 7C185-15 7C185-20 7C185-25 7C185-35

CY7C185

Switching Characteristics Over the Operating Range[6]

7C185-15, 7C185-20, 7C185-25, 7C185-35 specifications