Write Cycle No WE Controlled12, 17 | Cypress CY62136VN specification

CY62136VN MoBL®

Write Cycle No. 1 (WE Controlled)[12, 17, 18]

NOTE 19

tHZOE

Notes:

17.Data I/O is high impedance if OE = VIH.

18.If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.

19.During this period, the I/Os are in output state and input signals should not be applied.

Document #: 001-06510 Rev. *A

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Contents

Cypress Semiconductor Corporation FeaturesLogic Block Diagram PinConfigurations3 Functional Description1 BLE BHE Pin Configurations3Product Portfolio Speed Ranges Typ Maximum Maximum Ratings Electrical Characteristics Over the Operating RangeCapacitance6 Data Retention Waveform Data Retention Characteristics Over the Operating RangeThermal Resistance6 AC Test Loads and Waveforms 55 ns 70 ns Parameter Description Unit Min Max Read Cycle Switching Characteristics Over the Operating RangeWrite Cycle 12 Read Cycle No Switching Waveforms Write Cycle No CE Controlled12, 17 Write Cycle No WE Controlled12, 17Data I/O Data in Valid Write Cycle No BHE/BLE Controlled, OE LOW19 Write Cycle No WE Controlled, OE LOW13 BHE BLE Typical DC and AC CharacteristicsInputs/Outputs Mode Power Truth Table Pin Tsop II Package DiagramsOrdering Code Package Package Type Operating Diagram Range Ordering Information Bottom View PIN 1 Corner Ball 7.00 mm x 7.00 mm Fbga NXR Document HistoryREV ECN no RXU