CY62147DV18

MoBL2™

Document History Page

Document Title:CY62147DV18 MoBL2™ 4-Mb (256K x 16) Static RAM

Document Number: 38-05343

REV.

ECN NO.

Issue

Orig. of

Description of Change

Date

Change

 

 

 

 

 

**

127482

06/17/03

HRT

New Data Sheet

 

 

 

 

 

*A

131009

11/26/03

CBD

Changed From Advance to Preliminary

 

 

 

 

 

*B

229908

See ECN

AJU

Changed From Preliminary to Final

 

 

 

 

Added 70 ns speed bin

 

 

 

 

Changed Vcc MAX spec from 2.20V to 2.25V

 

 

 

 

Modified VIH spec on footnote #6 from VCC (MAX) + 0.5V to VCC (MAX) + 0.75V

 

 

 

 

Changed ICC TYP values from 8 mA to 6 mA

 

 

 

 

Changed ICC MAX values at Vcc (max) = 1.95V from 15 mA to 12 mA (L bin)

 

 

 

 

and 10 mA to 8mA (LL bin)

 

 

 

 

Changed ICC MAX values at Vcc (max) = 2.25V from 18 mA to 15 mA (L bin)

 

 

 

 

and 12mA to 10 mA (LL bin)

 

 

 

 

With modified Vcc MAX spec, changed ISB1 and ISB2 MAX values from 15 uA

 

 

 

 

to 18 uA (L bin) and 10 uA to 12 uA (LL bin)

 

 

 

 

Modified input and output capacitance values

 

 

 

 

Removed footnote #9 from earlier rev

 

 

 

 

Removed MAX value for VDR

 

 

 

 

Modified tHZOE from 20 ns to 16 ns

 

 

 

 

Added Pb-free ordering information

Document #: 38-05343 Rev. *B

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Cypress CY62147DV18 manual Document History, REV ECN no, Issue Orig. Description of Change Date